PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.

Major capability parameter
Growth method hydro-thermal method
Crystal Structure M6
Unit cell constant a=4.914Å    c=5.405 Å
Melt point(℃) 1610℃
Density 2.684g/cm3
Hardness 7(mohs)
Thermal conductivity 0.0033cal/cm℃
Planned constant 1200uv/℃(300℃)
Index of refraction 1.544
Thermal expansion α11:13.71×10­6 / ℃ α33:7.48×10­6 /℃
Frequency constant 1661(kHz/mm)
Crystal orientation Y、X or Z,30º~42.75 º ±5
Polishing Single or double  Ra<10Å
Thickness 0.5mm±0.05mm TTV<5um
Diameter Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

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