SiO2+Si3N4 on Si wafer

PAM XIAMEN offers SiO2+Si3N4 on Si wafer.

300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped R:0.01-0.1ohm.cm

Thermal oxide Layer

Research Grade , about 80 % useful  area
SiO2(300nm)+50nm Si3N4  layer on 2″ Silicon wafer( Both sides)
Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
Si3N4 thickness:50nm ( Both sides)
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455

Silicon Wafer Specifications:

Conductive type:        Si   P type/ Boron doped 
Resistivity:                  0.01-0.1 ohm-cm
Size:                          50.8 diameter +/- 0.5 mm x 0.250 +/- 0.025 mm
Orientation:                (100) +/- 0.5o
Polish:                        Both  sides  polished
Surface roughness:      < 5A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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