PAM XIAMEN offers SiO2+Si3N4 on Si wafer.
300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped R:0.01-0.1ohm.cm
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( Both sides)
Oxide layer thickness: 300 nm ( 3000A) +/-10%
Si3N4 thickness:50nm ( Both sides)
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455
Silicon Wafer Specifications:
Conductive type: Si P type/ Boron doped
Resistivity: 0.01-0.1 ohm-cm
Size: 50.8 diameter +/- 0.5 mm x 0.250 +/- 0.025 mm
Orientation: (100) +/- 0.5o
Polish: Both sides polished
Surface roughness: < 5A
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.