SiO2+Si3N4 on Silicon wafer

PAM XIAMEN offers SiO2 +Si3N4 on Silicon wafer as follows

No.1: 300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped,Resistivity:0.01-0.1ohm.cm

Thermal oxide Layer

Research Grade , about 80 % useful area
SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( Both sides)

Oxide layer thickness: 300 nm ( 3000A) +/-10%
Si3N4 thickness:50nm ( Both sides)
Growth method – Dry oxidizing at 1000oC
Refractive index – 1.455

Silicon Wafer Specifications:

Conductive type: Si P type/ Boron doped
Resistivity: 0.01-0.1 ohm-cm
Size: 50.8 diameter +/- 0.5 mm x 0.250 +/- 0.025 mm
Orientation: (100) +/- 0.5deg.
Polish: Both side polished
Surface roughness: < 5A

No.2: Si-SiO2-Si3N4-PAM-191005
Si substrate
Diameter: 150 mm
Orientation: (1-0-0)
Dopant: B
Type: P-type
Resistivity: 0.1-100 Ohm*cm
Thickness: 675±25um
DSP
OF: yes
IF: no
SiO2 thickness (wet method): 26000±5% Å
Si3N4 thickness (LPCVD method): 1000±5% Å or 1500±5% Å or 2200±5% Å
Refractive index of Si3N4: 2.00±0.05 @ 632.8 nm
Tensile strain in Si3N4: ≥800 MPa± 55 MPa

For more information, please enquire us at victorchan@powerwaywafer.com

2019-04-29

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