PAM XIAMEN offers 8″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
8″
725
P/E
FZ 2,000-6,000 {2,500-3,700}
SEMI notch Prime, TTV<6μm, Bow<15μm, Warp<40μm
p-type Si:B
[100]
8″
725
P/E
8-12
SEMI notch Prime, TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.1-100.0
TEST grade, SEMI notch,TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.005-0.010
Prime, SEMI notch,TTV<4µm
n-type Si:P
[100]
8″
725
P/P
1-2
SEMI notch Prime, Up to 200 wafers available
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in [...]
2019-03-04meta-author
As a semiconductor wafer supplier, silicon wafers by FZ or CZ are provided at prime grade, test grade and so on. More wafer specifications, please view https://www.powerwaywafer.com/silicon-wafer. The post-processing of the silicon crystal from PAM-XIAMEN is introduced below.
After the silicon crystal is grown, the [...]
2022-07-11meta-author
The SiC wafer application fields are mainly divided into the electronic power field, the radio frequency field, the photoelectric field, and other fields. Among them, the electronic power field and the radio frequency field are the most important applications, and the advantages of silicon carbide wafer usage are [...]
2021-04-13meta-author
PAM-XIAMEN can offer 6 inch N-type GaAs wafer. Gallium arsenide is a second-generation semiconductor material with excellent performance. Gallium arsenide belongs to the second-generation semiconductors, which has far superior frequency, power and withstand voltage performance than the first-generation silicon semiconductors. According to different resistance, GaAs [...]
2021-04-20meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
350
P/P
FZ 2,700-3,250
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
900
C/C
FZ >50
SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P
[100]
6″
825
C/C
FZ 7,000-8,000 {7,025-7,856}
SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >3,500
SEMI Prime, 1Flat (57.5mm)
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
790 ±10
C/C
FZ >3,500
SEMI, 1Flat
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
BROKEN
FZ >1,000
SEMI notch Test, Broken into many large pieces. One piece [...]
2019-03-04meta-author
What we provide:
Item
undoped N-
Si doped N+
Semi-insulating
P+
Freestanding GaN substrate
yes
yes
yes
GaN on sapphire
yes
yes
yes
yes
InGaN on sapphire
yes
***
AlN on sapphire
yes
LED wafer
(p+GaN/MOW/N+GaN/N-AlGaN/N+GaN/N-GaN/sapphire)
Freestanding GaN substrate/GaN on sapphire/LED wafer:
For specifications of Freestanding GaN substrate/GaN on sapphire/LED wafer, please view Gallium Nitride wafer:
http://www.qualitymaterial.net/products_7.html
InGaN on Sapphire:
For specification of InGaN on sapphire template, pleas view InGaN substrate:
https://www.powerwaywafer.com/InGaN-Substrates.html
AlN on [...]
2019-09-24meta-author