Si+SiO2+Ti( or TiO2)+Pt Thin Film

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Si+SiO2+Ti( or TiO2)+Pt Thin Film

PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows:

1. Specifications of Coated Silicon Wafer

Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal

SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,2″x0.279mm,1sp P-type — SI-SO-Ti-Pt (111) 50D0279C1
SiO2+Ti+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=3nm ,Pt(111)=60nm)
SiO2+TiO2+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp N-type un-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)
SiO2+TiO2+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)
ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)

Si+SiO2 +Ti+Pt Polycrystalline

BiFeO3 Film（400nm) on (Pt/Ti/SiO2/Si)，10x10x0.5mm – BiFeO3-Pt-101005S1
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)

2. FAQ about Coated Silicon Wafers

Q1: What field is your Si+SiO2 +Ti( or TiO2)+Pt Thin film planned to be used in?

A: The Si+SiO2 +Ti( or TiO2)+Pt thin film is used as electrode.

Q2: How does SiO2 grow on silion substrate?

A: Our SiO2 thin film is deposited on Si wafer by thermal oxidation.

Q3: How does Ti+Pt film precipitate on Si wafer?

A: We use sputtering to epitaxial Ti and Pt thin film on Si wafer.

Q4: How does TiO2 grow on SiO2 wafer?

A: TiO2 film is deposited by sputtering.

Q5: What is the purity of platinum that you sputtered on silicon?

A: The Pt purity we sputtered on silicon is 99.99%.

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

2019-04-29

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