Si+SiO2+Ti( or TiO2)+Pt Thin Film

Si+SiO2+Ti( or TiO2)+Pt Thin Film

PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film.

Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal

SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,2″x0.279mm,1sp P-type — SI-SO-Ti-Pt (111) 50D0279C1
SiO2+Ti+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=3nm ,Pt(111)=60nm)
SiO2+TiO2+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp N-type un-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)
SiO2+TiO2+Pt(111) thin film on Si substrate ,4″x0.525mm,1sp P-type B-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)
ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)

Si+SiO2 +Ti+Pt Polycrystalline

BiFeO3 Film(400nm) on (Pt/Ti/SiO2/Si),10x10x0.5mm – BiFeO3-Pt-101005S1
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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