SOS( Silicon on Sapphire)

PAM XIAMEN offers SOS( Silicon on Sapphire).

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.5mm,1sp, Film: 0.6 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.5 um thick

Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 0.6 um thick

Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick

Silicon-on-Sapphire (11-02, R Plane ), 10mmx 5mmx0.46 mm,2sp, Film:0.5um thick

Silicon-on-Sapphire (11-02, R Plane ), 10mmx10mm x0.5mm,,1sp film: 0.6um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.5um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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