PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-05meta-author
GaAs Schottky Diode Epitaxial Wafers
We offer GaAs Epitaxial Wafers for Schottky Diode as follows:
Epitaxial Structure PAM210319
No.
Material
Composition
Thickness Target(um)
Thickness Tol.
C/C(cm3) Target
C/C Tol.
Dopant
Carrrier Type
4
GaAs
1.00
±10%
>5.0E18
N/A
Si
N++
3
GaAs
0.28
±10%
2.0E17
±10%
Si
N
2
Ga1-xAlxAs
x=0.50
1
±10%
—
N/A
—
—
1
GaAs
0.05
±10%
—
N/A
—
—
Substrate: 2”,3”,4″
Millimeter and submillimeter heterodyne observations will improve our understanding of the universe, the solar system and the Earth atmosphere. Schottky diodes are strategical components [...]
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Antimony
N+
100
32,5 ± 2,5
110 ± 1
180 ± 5.0 °, 18.00 ± 2.00 mm
0.0 ± 1.0 °
0.010 – 0.020 Ohmcm
100.0 ± 0.5 mm
340 ± 10 µm
2
4
DSP
Antimony
N+
100
32,5 [...]
2019-02-25meta-author
PAM XIAMEN offers WSe2 Crystal.
WSe2 (Tungsten Diselenide) is a very stable semiconductor in the group-VI transition metal dichalcogenides. WSe2 photoelectrodes are stable in both acidic and basic conditions, making them potentially useful in electrochemical solar cells. Also, the material can be changed from [...]
2019-05-21meta-author
Undoped InP Wafer
PAM-XIAMEN offer undoped intrinsic InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, undoped
Dopant – undoped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length [...]
2020-03-18meta-author