PAM XIAMEN offers PbWO4 single crystal substrate.
PbWO4 single crystal substrate ,random orientation, 5 x 3 x 0.45mm,Single side polished
PbWO4 single crystal substrate ,random orientation, 5 x 5 x 0.45mm,Single side polished
PbWO4 (001) single crystal substrate 10x10x0.5mm,2sp
PbWO4 single crystal substrate , [...]
2019-05-14meta-author
PAM XIAMEN offers NaCl Sodium Chloride Crystal Substrates.
Sodium Chloride (NaCl) Crystal Substrates
Main Parameters
Crystal structure
Face-centered cubic Fm3m, No. 225, a=5.64Å
Growth method
crystallization process
Density
2.165 g/cm3
Melting Point
801 [...]
2019-03-14meta-author
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-08-12meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ Wafers <211>.
2″ Diameter Wafer
2″ Wafers <211>
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Ge Wafer (211) Undoped, 2″ dia x 0.45 mm, 2SP, Resistivities: > 45 ohm-cm
For more information, [...]
2019-04-25meta-author
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:
1. Red Infrared AlGaAs / GaAs LED Epi Wafer
PAM-190723-LED
Structure
Thickness, um
Type
Composition
CC, cm-3
Wide-gap window
1
р
AlхGa1-хAs (х=0,25-0,3)
(2-5) ∙1018
Barrier layer
0.06
р
AlхGa1-хAs (х=0,25-0,3)
(0.8-1) ∙1018
Active layer
–
GaAs
undoped
–
Al0,2Ga0,8As
Barrier layer
0.06
n
AlхGa1-хAs (х=0,25-0,3)
(0.5-1) ∙1017
Wide-gap window
6
n
AlхGa1-хAs
(1-2)∙1018
(х=0,3-0,35)
Stop layer
0.1
–
AlхGa1-хAs
–
(х=0,9-1)
Buffer layer
–
n
GaAs
–
Substrate
–
n+
GaAs
–
2. Where is the [...]
2020-05-18meta-author
980 Single Mode Laser Chip (PAM200827-LD)
PAM XIAMEN offers 980 Single Mode Laser Chip
Powerwaywafer
980 Single mode laser chip property
Minimum
Typical
Maximum
Central Wavelength 969 974 979 nm
970
980
990
Output Power (mW)
300
400
500
Working Mode CW
—
—
—
Longitudinal mode Single
—
—
—
Spectrum Width
—
—
—
Emitter Width
—
—
—
Cavity Width (μm)
640
650
660
Cavity Length (μm)
4490
4500
4510
Cavity Thickness (μm)
115
125
135
Fast Axis Divergence(FWHM) 30 Deg
—
—
—
Slow Axis Divergence (FWHM) [...]
2020-09-16meta-author