PAM XIAMEN offers ZnTe single crystal substrate.
ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp
ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp
ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40
ZnTe, N type, (110) [...]
2019-05-21meta-author
PAM XIAMEN offers Silicon Carbide (SiC) Wafers and Crystals.
PAM XIAMEN offers the best prices on the market for high-quality silicon carbide wafers and substrates up to six (6) inch diameter with both N type and Semi-insulating types. Our SiC wafers have been widely [...]
2019-03-15meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4″ Si substrate wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um
Back [...]
2019-07-05meta-author
CZT High-Density Pixel Detector
PAM-PA04 series detectors are high density pixel array detector based on CZT crystal. they can counting high-dose X-ray and imaging.
Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
>10.0×10.0mm2
Thickness
>0.7mm
Pixel size
<70um
Single Pixel leakage current
<0.01nA@100V
The maximum counting rate of linear region
>100Mcps/mm2
Electrode material
Au
Operation temperature
20℃~35℃
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Details
Feature
1. Room-temperature working
2. [...]
2019-04-24meta-author
Products
Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows:
1)GaN epitaxial growth on sapphire template;
Conduction Type: Si [...]
Thermodynamic analysis was conducted to determine the conditions necessary for the selective epitaxial growth (SEG) of SiC on masked Si substrates, and these results were compared to blanket SiC epitaxy on plain Si. For blanket SiC epitaxy, the proper deposition conditions leading to single‐phase SiC [...]
2020-01-07meta-author
