SrLaAlO4 crystal

PAM XIAMEN offers SrLaAlO4 crystal.

SrLaAlO4 crystal is a promising substrate material for high Tc superconduct film and other oxide films to replace SrTiO3 crystal with better quality and lower cost. MTI produces SrLaAlO4 crystal and substrate in house up to 35 mm. We strongly recommend to customers to use SrLaAlO4 substrate instead of SrTiO3, if possible, to improve expitaxy film quality.

SrLaAlO4 (100) 5x5x0.5mm, 1SP

SrLaAlO4 (100) 5x5x0.5mm, 2SP

SrLaAlO4 (100) 10x5x0.5mm, 1SP

SrLaAlO4 (100) 10x5x0.5mm, 2SP”

SrLaAlO4 (001) 10x20x1.0mm, 1SP

SrLaAlO4 (100) 10x10x0.5mm, 1SP

SrLaAlO4 (100) 10x10x0.5mm, 2SP

SrLaAlO4 (001) 10x10x0.5mm, 1SP

SrLaAlO4 (001) 10x10x0.5mm, 2SP

SrLaAlO4 (001) 5x5x0.5mm, 1SP

SrLaAlO4 (001) 10x10x1.0mm, 1SP

SrLaAlO4 (001) 10x10x1.0mm, 2SP

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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