SrTiO3 single crystal-2

SrTiO3 single crystal-2

PAM XIAMEN offers SrTiO3 single crystal.

SrTiO3 single crystal provides a good lattice match to most of  materials with Perovskite structure.  It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering target.  PAM XIAMEN has the full production line to manufacture first the high purity SrTiO3 powder, then the single crystal boules and finally the epi-polished substrates in many sizes. This allows us to provide SrTiO3 single crystal products with the highest quality and the lowest price to our customers the world over.

(110) SrTiO3

SrTiO3 (110) 10x5x0.5mm, 1sp

SrTiO3 (110) 0.5”x0.5”x0.5 mm Epi polished wafer 1SP

SrTiO3 (110) 5x5x0.2 mm Epi polished wafer 1 SP

SrTiO3 (110) 5x5x0.5 mm Epi polished wafer 1 SP

SrTiO3 (110) 5x5x0.5 mm Epi polished wafer 2 SP

SrTiO3 (110) 1/4″x1/4″x0.5 mm Epi polished wafer 1 SP

SrTiO3 (110) 10x10x0.5 mm Epi polished wafer 1 SP

SrTiO3 (110) 10x10x0.5 mm Epi polished wafer 1 SP

SrTiO3 (110) 10x10x0.5 mm Epi polished wafer 2 SP

SrTiO3 (110) 20x20x0.5 mm Epi polished wafer 1 SP

SrTiO3 (110) 1″x0.5 mm Epi polished wafer 1 SP

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-05-14

Share this post

Related Posts

PbSe single crystal substrate – Can’t Offer Temporarily

PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]

2019-05-14meta-author
GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry SLOW RAMP-UP BUT HUGE EXPECTATIONS The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling [...]

2012-07-11meta-author
A process model of wafer thinning by diamond grinding

A process model of wafer thinning by diamond grinding This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]

2013-10-29meta-author ,
Silicon Mirror

PAM XIAMEN offers high-quality, low-cost silicon mirros. Please let us know what specs we can quote for you? Below are some diagrams of Silicon Mirros that we have recently sold. NOTES: 1、MATERIAL:SILICON,MARROR GRADE 2、FINISH: SURFACE S1-FLATNESS λ/10 SURFACE QUALITY 40`20 SCRATCH-DIG SURFACE S2-COMMERICIAL POLISH ALL OTHER SURFACES-GROUND 3、n/a 4、INDICATE SURFACE S1 WITH PENCIL OR [...]

2019-02-26meta-author
MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]

2019-08-19meta-author
Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Highlights •GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays. •Transmission electron microscopy images revealed arrays of 90° misfit dislocations. •Threading dislocation densities of around View the MathML source were found in each case. •Lower dark currents and higher quantum efficiency was found [...]

2015-12-18meta-author