Substrates for III-V Nitride Film Deposition

Substrates for III-V Nitride Film Deposition

Substrates for III-V nitride Film Deposition

CrystalStructureM.P.DensityLattice Mis-match to GaNThermal ExpansionGrowth Tech. .& Max sizeStandard substrate size (mm)
oCg/cm3(10-6/k)
SiC

(6H as example)

Hexagonal~27003.213.5 % atori.10.3CVDØ2″ x 0.3,Ø3″x0.3
a=3.073  Å  20x20x0.3,15x15x0.3
c=15.117 Å Ø3“10x10x0.3,5x5x0.3
 subl. 1 side epi polished
Al2O3Hexagonal20303.9714% atori.7.5CZØ50 x 0.33
a=4.758 Å Ø25 x 0.50
c=12.99 ÅØ2”10x10x0.5
  1 or 2 sides epi polished
LiAlO2Tetragonal1900 ~2.621.4 % atori./CZ10x10x0.5
a=5.17 ÅØ20 mm1 or 2 sides epi polished
c=6.26 Å  
LiGaO2Orthor.16004.180.2 % atori./CZ10x10x0.5
a=5.406 ÅØ20 mm1 or 2 sides epi polished
b=5.012Å  
c=6.379 Å  
MgOCubic28523.583% atori.12.8Flux2”x2”x 0.5 mm,Ø2” x  0.5   mm
a=4.216 Å 1”x1”x 0.5 mm,Ø1” x  0.5   mm
 Ø2″10 x10x0.5 mm
1 or 2 sides epi polished
MgAl2O4Cubic21303.69% atori.7.45CZØ2″ x 0.5
a=8.083 ÅØ2“10x10x0.5
  1 or 2 sides epi polished
ZnOHexag.19755.6052.2 % atori.2.9Hydro-thermal20x20x0.5
a=3.325 Å20mm1 or 2 sides epi polished
c=5.213 Å  
GaNHexagonal 6.15 5.59 10x10x0.475mm
  5x5x0.475mm

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