Substrates for III-V Nitride Film Deposition

Substrates for III-V nitride Film Deposition

Crystal Structure M.P. Density Lattice Mis-match to GaN Thermal Expansion Growth Tech. .& Max size Standard substrate size (mm)
oC g/cm3 (10-6/k)
SiC

(6H as example)

Hexagonal ~2700 3.21 3.5 % atori. 10.3 CVD Ø2″ x 0.3,Ø3″x0.3
a=3.073  Å     20x20x0.3,15x15x0.3
c=15.117 Å   Ø3“ 10x10x0.3,5x5x0.3
  subl.   1 side epi polished
Al2O3 Hexagonal 2030 3.97 14% atori. 7.5 CZ Ø50 x 0.33
a=4.758 Å   Ø25 x 0.50
c=12.99 Å Ø2” 10x10x0.5
    1 or 2 sides epi polished
LiAlO2 Tetragonal 1900 ~ 2.62 1.4 % atori. / CZ 10x10x0.5
a=5.17 Å Ø20 mm 1 or 2 sides epi polished
c=6.26 Å    
LiGaO2 Orthor. 1600 4.18 0.2 % atori. / CZ 10x10x0.5
a=5.406 Å Ø20 mm 1 or 2 sides epi polished
b=5.012Å    
c=6.379 Å    
MgO Cubic 2852 3.58 3% atori. 12.8 Flux 2”x2”x 0.5 mm,Ø2” x  0.5   mm
a=4.216 Å   1”x1”x 0.5 mm,Ø1” x  0.5   mm
  Ø2″ 10 x10x0.5 mm
1 or 2 sides epi polished
MgAl2O4 Cubic 2130 3.6 9% atori. 7.45 CZ Ø2″ x 0.5
a=8.083 Å Ø2“ 10x10x0.5
    1 or 2 sides epi polished
ZnO Hexag. 1975 5.605 2.2 % atori. 2.9 Hydro-thermal 20x20x0.5
a=3.325 Å 20mm 1 or 2 sides epi polished
c=5.213 Å    
GaN Hexagonal   6.15   5.59   10x10x0.475mm
    5x5x0.475mm

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