Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3
We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as 2×10–7 A/cm2 at a bias field up to 2 MV/cm is observed in the GaN MOS devices that are formed by novel PEC wet etching and have the top surface and mesa sidewall passivated by the photo-grown Ga2O3. The depth-resolved X-ray photo-emission spectra (XPS) and atomic-ratio analysis indicate that a intermediate and thin ∼20 nm GaON layer of graded composition forms the Ga2O3/GaON/GaN system, which releases the interfacial strain and thus minimizes the density of interfacial states. The IV and high-frequency CV analyses reveal that the Ga2O3 layer can sustain an electrical breakdown field of 3.5 MV/cm and the structures have a low density of interfacial state (Dit) in the order of 1011 eV–1cm–2. We attribute these results to the immunity to surface damage by the novel PEC wet etching and the effective passivation on mesa sidewall and surface formed by the photo-grown Ga2O3.
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