Low Stress Nitride Silicon Wafers
PAM XIAMEN offers Low Stress Nitride Silicon Wafers.
Why use low stress nitride on your silicon wafers? Some uses include surface micromachining process that can fabricate the micromechanical structures when internal tensile stress and native nonporous morphology is required.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11meta-author
PAM XIAMEN offers IV, III–V and II–VI compound semiconductors.
There are many III–V and II–VI compound semiconductors with high bandgaps. The only high bandgap materials in group IV are Diamond and Silicon Carbide (SiC).
Aluminum Nitride (AlN) can be used to fabricate ultraviolet LEDs with wavelengths [...]
2019-03-21meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author
PAM XIAMEN offers LiF Lithium Fluoride Crystal.
LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
2019-03-14meta-author
Undoped InP Wafer
PAM-XIAMEN offer low doped InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 16.0±1.0 mm;
[...]
2020-03-18meta-author
PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 0.5±0.03mm
Item
Unit
Value
Test Standard
1)Colour
—-
Gray
3.2
2)Density
g/cm³
≥3.33
GB/T 2413
3)Thermal Conductivity
20℃,W/(m·K)
≥170
GB/T 5598
4)Dielectric Constant
1MHz
8~10
GB/T 5594.4
5)Dielectric Strength
KV/mm
≥17
GB/T 5593
6)Flexural Strength
MPa
≥450
GB/T 5593
7)Camber
Length‰
≤2‰
8)Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9)Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃,Ω.cm
≥1013
GB/T 5594.5
11)Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-03meta-author