GaN Templates

PAM-XIAMENs mallprodukter består av kristallina lager av (galliumnitrid) GaN-mallar, (aluminiumnitrid) AlN-mall, (aluminium galliumnitrid) AlGaN-mallar och (indium galliumnitrid) InGaN-mallar, som deponeras på safir
  • Description

Product Description

GaN Template (gallium nitride template)

PAM-XIAMEN’s GaN Template consists of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN) and indium gallium nitride (InGaN), which are epilayer on sapphire and electronic grade for fabrication as MOS-based devices. PAM-XIAMEN’s Gallium Nitride Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.

2″(50.8mm) GaN mallar Epitaxy on Sapphire Substrates

Punkt PAM-2inch-GaNT-N PAM-2inch-GaNT-SI
ledningstyp N-typ Halvisolerande
dopningsmedel Si dopade eller odopade fe dopade
Storlek 2 "(50 mm) diam.
Tjocklek 4um,20um,30um,50um,100um 30um, 90um
Orientering C-axel (0001) +/- 1 °
Resistivitet (300K) <0.05Ω • cm >1×106Ω·cm
dislokation Densitet <1x108cm-2
substrat struktur  GaN on Sapphire(0001)
Ytfinish Enkel eller Double Side Polerad, epi-ready
användbar Area ≥ 90%

2″ (50.8mm)GaN Templates Epitaxy on Sapphire Substrates

Punkt PAM-GANT-P
ledningstyp P-typ
dopningsmedel mg dopad
Storlek 2 "(50 mm) diam.
Tjocklek 5um, 20um, 30um, 50 um, 100um
Orientering C-axel (0001) +/- 1 °
Resistivitet (300K) <1Ω • cm eller anpassade
dopämneskoncentration 1E17(cm-3)  or custom
substrat struktur  GaN on Sapphire(0001)
Ytfinish Enkel eller Double Side Polerad, epi-ready
användbar Area ≥ 90%

 3″(76.2mm)GaN Templates Epitaxy on Sapphire Substrates

Punkt PAM-3inch-GaNT-N
ledningstyp N-typ
dopningsmedel Si dopade eller odopade
Uteslutning Zone: 5mm från ytterdiametern
Tjocklek: 20um,30um
Dislocation density < 1x108cm-2
Ytmotstånd (300K): <0.05Ω • cm
Substrat:  sapphire
Orientation :  C-plane
Safir tjocklek: 430um
Putsning: Single sida Polerad, epi-ready, med atom steg.
Baksidesbeläggning: (custom)high quality Titanium coating, thickness > 0.4 μm
Förpackning: Individually packed under argon
Atmosphere vacuum sealed in class 100 clean room.

3″(76.2mm)GaN Templates Epitaxy on Sapphire Substrates

Punkt PAM-3inch-GaNT-SI
ledningstyp Halvisolerande
dopningsmedel Fe Doped
Uteslutning Zone: 5mm från ytterdiametern
Tjocklek: 20um, (är 20um bäst) 30um, 90um
Dislocation density < 1x108cm-2
Ytmotstånd (300K):  >106 ohm.cm
Substrat:  sapphire
Orientation :  C-plane
Safir tjocklek: 430um
Putsning: Single sida Polerad, epi-ready, med atom steg.
Baksidesbeläggning: (custom)high quality Titanium coating, thickness > 0.4 μm
Förpackning: Individually packed under argon Atmosphere vacuum sealed in class 100 clean room.

4″(100mm)GaN Templates Epitaxial on Sapphire Substrates

Punkt PAM-4inch-GaNT-N
ledningstyp N-typ
dopningsmedel   undoped
Tjocklek: 4um
Dislocation density < 1x108cm-2
Ytmotstånd (300K): <0.05Ω • cm
Substrat:  sapphire
Orientation :  C-plane
Safir tjocklek:
Putsning: Single sida Polerad, epi-ready, med atom steg.
Förpackning: Individually packed under argon Atmosphere
vacuum sealed in class 100 clean room.

2″ (50.8mm)AlGaN, InGaN, AlN Epitaxy on Sapphire Templates: custom
2”(50.8mm)AlN Epitaxy on Sapphire Templates

Punkt PAM-AlNT-SI
ledningstyp semi-insulating
Diameter Ф 50,8 mm ± 1 mm
Tjocklek: 1000 nm +/- 10%
Substrat:  sapphire
Orientation : C-axel (0001) +/- 1 °
orientering Flat Ett plan
XRD FWHM av (0002) <200 bågsekunder.
Användbar Surface Area ≥90%
 Polishing: Inget

2”(50.8mm)InGaN Epitaxy on Sapphire Templates

Punkt PAM-INGAN
Conduction Type
Diameter Ф 50.8mm ± 1mm
Tjocklek: 100-200nm, custom
Substrat:  sapphire
Orientation : C-axis(0001)+/-1O
dopningsmedel
Dislocation Density ~ 108 cm-2
Useable Surface Area ≥90%
Surface Finish Single or Double Side Polished,epi-ready

2”(50.8mm)AlGaN Epitaxy on Sapphire Templates

Punkt PAM-AlNT-SI
ledningstyp semi-insulating
Diameter Ф 50,8 mm ± 1 mm
Tjocklek: 1000 nm +/- 10%
Substrat:  sapphire
Orientation : C-planet
orientering Flat Ett plan
XRD FWHM av (0002) <200 bågsekunder.
Användbar Surface Area ≥90%
 Polishing: Inget

GaN Template on Sapphire& Silicon

2″(50.8mm)GaN on 4H or 6H SiC substrate

1)Undoped GaN buffer or AlN buffer are available;
2)n-type(Si doped or undoped), p-type or semi-insulating GaN epitaxial layers available;
3)vertical conductive structures on n-type SiC;
4)AlGaN – 20-60nm thick, (20%-30%Al), Si doped buffer;
5)GaN n-type layer on 330µm+/-25um thick 2” wafer.
6) Single or double side polished, epi-ready, Ra<0.5um
7)Typical value on XRD:
Wafer ID Substrate ID XRD(102) XRD(002) Tjocklek
#2153 X-70105033 (with AlN) 298 167 679um
         
 Single or double side polished, epi-ready, Ra<0.5um

GaN på SiC -substrat

6″ (150mm)n-GaN on double-side polished flat sapphire

Target remark  
Substrate diameter 150 mm +/- 0.15 mm
Substrate thickness 1300 um or 1000um +/- 25 um
c-plane (0001), offcut angle towards m-plane 0.2 deg +/- 0.1 deg
Single primary flat length 47.5 mm +/- 1 mm
Flat orientation a-plane +/- 0.2 deg
Si-doped n-GaN thickness 4 um +/- 5%
Si concentration in n-GaN 5e18 cm-3 yes
u-GaN thickness 1 um no this layer
XRD rocking curve (002) < 250 arcsec <300 arcsec
XRD rocking curve (102) < 250 arcsec <350 arcsec
Dislocation density < 5e8 cm-2 yes
Front side surface, AFM (5×5 um2) Ra < 0.5 nm, Epi-ready yes
Back side surfac\e 0.6 – 1.2 um, fine ground yes
Wafer bowing < 100 um no this data
n-GaN resistivity (300K) < 0.01 ohm-cm2 yes
Total thickness variation < 25 um <10um
Defect density Macro defects (>100 um):< 1/wafer  Micro defects (1-100 um):< 1/cm2 Macro defects (>100 um):< 10/wafer Micro defects (1-100 um):< 10/cm2
Laser marking on the backside of the wafer flat yes
Paket packaged in a class 100 clean room environment, in cassettes of 25 pcs or single wafer containers, under nitrogen atmosphere, double sealed yes
Edge exclusion < 3 mm yes
Useable surface area > 90% yes

Hydride Vapour Phase Epitaxy (HVPE) process

GaN template on sapphire is grown by HVPE process and technology for the production of compound semiconductors such as GaN, AlN, and AlGaN. GaN templates are used in a wide applications: solid state lighting, short wavelength optoelectronics and RF power device.

In the HVPE process, Group III nitrides (such as GaN, AlN) are formed by reacting hot gaseous metal chlorides (such as GaCl or AlCl) with ammonia gas (NH3). The metal chlorides are generated by passing hot HCl gas over the hot Group III metals. All reactions are done in a temperature controlled quartz furnace.

We will offer test reports, please see below an example:

AlGaN template structure report

FWHM and XRD report

AlN Single Crystal Substrate& Template on Sapphire/Silicon

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