GaN baserad LED epitaxiell skiva
PAM-XIAMEN s GaN (galliumnitrid) -baserade LED epitaxiell skiva är för ultrahög ljusstyrka blå och gröna lysdioder (LED) och laserdioder (LD) applikations.
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The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.
1. LED Wafer List
LED Epitaxial Wafer |
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Punkt | Size | Orientering | Emission | Wavelength | Thickness | Substrat | Surface | Usable area |
PAM-50-LED-BLUE-F | 50mm | 0°±0.5° | blue light | 445-475nm | 425um+/-25um | Safir | P/L | >90% |
PAM-50-LED-BLUE-PSS | 50mm | 0°±0.5° | blue light | 445-475nm | 425um+/-25um | Safir | P/L | >90% |
PAM-100-LED-BLUE-F | 100mm | 0°±0.5° | blue light | 445-475nm | / | Safir | P/L | >90% |
PAM-100-LED-BLUE-PSS | 100mm | 0°±0.5° | blue light | 445-475nm | / | Safir | P/L | >90% |
PAM-150-LED-BLUE | 150mm | 0°±0.5° | blue light | 445-475nm | / | Safir | P/L | >90% |
PAM-100-LED-BLUE-SIL | 50mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
PAM-100-LED-BLUE-SIL | 100mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
PAM-150-LED-BLUE-SIL | 150mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
PAM-200-LED-BLUE-SIL | 200mm | 0°±0.5° | blue light | 445-475nm | / | Silicon | P/L | >90% |
PAM-50-LED-GREEN-F | 50mm | 0°±0.5° | green light | 510-530nm | 425um+/-25um | Safir | P/L | >90% |
PAM-50-LED-GREEN-PSS | 50mm | 0°±0.5° | green light | 510-530nm | 425um+/-25um | Safir | P/L | >90% |
PAM-100-LED-GREEN-F | 100mm | 0°±0.5° | green light | 510-530nm | / | Safir | P/L | >90% |
PAM-100-LED-GREEN-PSS | 100mm | 0°±0.5° | green light | 510-530nm | / | Safir | P/L | >90% |
PAM-150-LED-GREEN | 150mm | 0°±0.5° | green light | 510-530nm | / | Safir | P/L | >90% |
PAM-100-LED-RED-GAAS-620 | 100mm | 15°±0.5° | red light | 610-630nm | / | GaAs | P/L | >90% |
PAM210527-LED-660 | 100mm | 15°±0.5° | red light | 660nm | / | GaAs | P/L | >90% |
PAM-210414-850nm-LED | 100mm | 15°±0.5° | IR | 850nm | / | GaAs | P/L | >90% |
PAMP21138-940LED | 100mm | 15°±0.5° | IR | 940nm | / | GaAs | P/L | >90% |
PAM-50-LED-UV-365-PSS | 50mm | 0°±0.5° | UVA | 365 nm | 425um+/-25um | Safir | ||
PAM-50-LED-UV-405-PSS | 50mm | 0°±0.5° | UVA | 405 nm | 425um+/-25um | Safir | ||
PAM-50-LED-UVC-275-PSS | 50mm | 0°±0.5° | UVC | 275nm | 425um+/-25um | Safir | ||
PAM-50-LD-UV-405-SIL | 50mm | 0°±0.5° | UV | 405nm | / | Silicon | P/L | >90% |
PAM-50-LD-BLUE-450-SIL | 50mm | 0°±0.5° | blue light | 450nm | / | Silicon | P/L | >90% |
As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
2. InGaN/GaN(galliumnitrid) baserad LED Epitaxial Wafer
GaN på Al2O3-2” epi wafer Specification (LED epitaxiell skiva)
Vit : 445 ~ 460 nm |
Blå : 465 ~ 475 nm |
Grön : 510 ~ 530 nm |
1. Tillväxt Technique - MOCVD
2.Wafer diameter: 50,8 mm
3.Wafer substratmaterial: Mönstrat safirunderlag (Al2O3) eller platt safir
4.Wafer mönsterstorlek: 3X2X1.5μm
3. Wafer structure:
strukturskikt | Tjocklek (^ m) |
p-GaN | 0.2 |
p-AlGaN | 0.03 |
InGaN / GaN (aktiv area) | 0.2 |
n-GaN | 2.5 |
u- GaN | 3.5 |
AI2O3 (Substrat) | 430 |
4. Wafer parameters to make chips:
em | Färg | chip Size | egenskaper | Utseende | |
PAM1023A01 | Blå | 10mil x 23mil | Belysning | ||
Vf = 2,8 ~ 3.4V | LCD-skärmens bakgrundsbelysning | ||||
Po = 18 ~ 25mW | mobila apparater | ||||
Wd = 450 ~ 460 nm | Konsumentelektronik | ||||
PAM454501 | Blå | 45mil x 45mil | Vf = 2,8 ~ 3.4V | Allmänbelysning belysning~~POS=HEADCOMP | |
Po = 250 ~ 300mW | LCD-skärmens bakgrundsbelysning | ||||
Wd = 450 ~ 460 nm | utomhus display |
5. Application of LED epitaixal wafer:
*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments
Belysning
LCD bakgrundsbelysning
mobila apparater
Konsumentelektronik
6. Specification of LED Epi Wafer as an example:
Spec PAM190730-LED
- storlek: 4 tum
- VD: 455 ± 10 nm
- ljusstyrka:> 90mcd
- VF: <3,3V
- n-GaN tjocklek: <4.1㎛
- u-GaN-tjocklek: <2,2㎛
- substrat: mönstrat safirsubstrat (PSS)
7.GaAs(Gallium arsenide)based LED Wafer Material:
Beträffande GaAs LED rån, de ökat med MOCVD, se nedan våglängd GaAs LED wafer:
Red: 585nm, 615nm, 620 ~ 630 nm
Gul: 587 ~ 592 nm
Gul / grön: 568 ~ 573 nm
8. Definition of LED Epitaxial Wafer:
Vad vi erbjuder är bara LED-epi-wafer eller inte bearbetad wafer utan litografiprocesser, n- och metalkontakter etc. Och du kan tillverka LED-chip med din tillverkningsutrustning för olika applikationer som nano-optoelektronikforskning.
Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!
För dessa detaljer GaAs LED rånet specifikationer, vänligen besök:GaAs Epi Wafer för LED
För UV LED rånet specifikationer, vänligen besök:UV LED Epi Wafer
För LED wafer på kisel specifikationer, vänligen besök:LED Wafer på Silicon
För Blue GaN LD Wafer specifikationer, vänligen besök: Blue GaN LD Wafer
For Violet GaN LD Wafer, please visit: 405nm GaN Laser Diode Wafer
850nm och 940nm infraröd LED-skiva
850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer
GaN Wafers to Fabricate LED Devices
GaN LED Structure Epitaxy on Flat or PSS Sapphire Substrate
GaN Epitaxial Growth on Sapphire for LED
Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition
Si-based GaN PIN Photodetector Structure
For more foundry services, please visit: GaN Foundry Services for LED Fabrication