GaN baserad LED epitaxiell skiva

GaN baserad LED epitaxiell skiva

PAM-XIAMEN s GaN (galliumnitrid) -baserade LED epitaxiell skiva är för ultrahög ljusstyrka blå och gröna lysdioder (LED) och laserdioder (LD) applikations.

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The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

LED Epitaxial Wafer

Punkt Size Orientering Emission Wavelength Thickness   Substrat Surface Usable area
 PAM-50-LED-BLUE-F 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Safir P/L >90%
 PAM-50-LED-BLUE-PSS 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Safir P/L >90%
 PAM-100-LED-BLUE-F 100mm 0°±0.5° blue light 445-475nm / Safir P/L >90%
 PAM-100-LED-BLUE-PSS 100mm 0°±0.5° blue light 445-475nm / Safir P/L >90%
 PAM-150-LED-BLUE 150mm 0°±0.5° blue light 445-475nm / Safir P/L >90%
 PAM-100-LED-BLUE-SIL 50mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-100-LED-BLUE-SIL 100mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-150-LED-BLUE-SIL 150mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-200-LED-BLUE-SIL 200mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-50-LED-GREEN-F 50mm 0°±0.5° green light 510-530nm 425um+/-25um Safir P/L >90%
 PAM-50-LED-GREEN-PSS 50mm 0°±0.5° green light 510-530nm 425um+/-25um Safir P/L >90%
 PAM-100-LED-GREEN-F 100mm 0°±0.5° green light 510-530nm / Safir P/L >90%
 PAM-100-LED-GREEN-PSS 100mm 0°±0.5° green light 510-530nm / Safir P/L >90%
 PAM-150-LED-GREEN 150mm 0°±0.5° green light 510-530nm / Safir P/L >90%
 PAM-100-LED-RED-GAAS-620 100mm 15°±0.5° red light 610-630nm / GaAs P/L >90%
PAM210527-LED-660 100mm 15°±0.5° red light 660nm / GaAs P/L >90%
 PAM-210414-850nm-LED 100mm 15°±0.5° IR 850nm / GaAs P/L >90%
 PAMP21138-940LED 100mm 15°±0.5° IR 940nm / GaAs P/L >90%
 PAM-50-LED-UV-365-PSS 50mm 0°±0.5° UVA 365 nm 425um+/-25um Safir
 PAM-50-LED-UV-405-PSS 50mm 0°±0.5° UVA 405 nm 425um+/-25um Safir
 PAM-50-LED-UVC-275-PSS 50mm 0°±0.5° UVC 275nm 425um+/-25um Safir
 PAM-50-LD-UV-405-SIL 50mm 0°±0.5° UV 405nm / Silicon P/L >90%
 PAM-50-LD-BLUE-450-SIL 50mm 0°±0.5° blue light 450nm / Silicon P/L >90%


As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

2. InGaN/GaN(galliumnitrid) baserad LED Epitaxial Wafer

GaN på Al2O3-2” epi wafer Specification (LED epitaxiell skiva)

Vit : 445 ~ 460 nm
Blå : 465 ~ 475 nm
Grön : 510 ~ 530 nm

1. Tillväxt Technique - MOCVD
2.Wafer diameter: 50,8 mm
3.Wafer substratmaterial: Mönstrat safirunderlag (Al2O3) eller platt safir
4.Wafer mönsterstorlek: 3X2X1.5μm

3. Wafer structure:

strukturskikt Tjocklek (^ m)
p-GaN 0.2
p-AlGaN 0.03
InGaN / GaN (aktiv area) 0.2
n-GaN 2.5
u- GaN 3.5
AI2O3 (Substrat) 430

 

4. Wafer parameters to make chips:

em Färg chip Size egenskaper Utseende
PAM1023A01 Blå 10mil x 23mil Belysning
Vf = 2,8 ~ 3.4V LCD-skärmens bakgrundsbelysning
Po = 18 ~ 25mW mobila apparater
Wd = 450 ~ 460 nm Konsumentelektronik
PAM454501 Blå 45mil x 45mil Vf = 2,8 ~ 3.4V Allmänbelysning belysning~~POS=HEADCOMP
Po = 250 ~ 300mW LCD-skärmens bakgrundsbelysning
Wd = 450 ~ 460 nm utomhus display

 

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

Belysning
LCD bakgrundsbelysning
mobila apparater
Konsumentelektronik

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
- storlek: 4 tum
- VD: 455 ± 10 nm
- ljusstyrka:> 90mcd
- VF: <3,3V
- n-GaN tjocklek: <4.1㎛
- u-GaN-tjocklek: <2,2㎛
- substrat: mönstrat safirsubstrat (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

Beträffande GaAs LED rån, de ökat med MOCVD, se nedan våglängd GaAs LED wafer:
Red: 585nm, 615nm, 620 ~ 630 nm
Gul: 587 ~ 592 nm
Gul / grön: 568 ~ 573 nm

8. Definition of LED Epitaxial Wafer:

Vad vi erbjuder är bara LED-epi-wafer eller inte bearbetad wafer utan litografiprocesser, n- och metalkontakter etc. Och du kan tillverka LED-chip med din tillverkningsutrustning för olika applikationer som nano-optoelektronikforskning.

 

Remark:
The Chinese government has announced new limits on the exportation of Gallium materials (such as GaAs, GaN, Ga2O3, GaP, InGaAs, and GaSb) and Germanium materials used to make semiconductor chips. Starting from August 1, 2023, exporting these materials is only allowed if we obtains a license from the Chinese Ministry of Commerce. Hope for your understanding and cooperation!

För dessa detaljer GaAs LED rånet specifikationer, vänligen besök:GaAs Epi Wafer för LED

För UV LED rånet specifikationer, vänligen besök:UV LED Epi Wafer  

 AlGaN UV LED Wafer

För LED wafer på kisel specifikationer, vänligen besök:LED Wafer på Silicon

För Blue GaN LD Wafer specifikationer, vänligen besök: Blue GaN LD Wafer

For Violet GaN LD Wafer, please visit: 405nm GaN Laser Diode Wafer

GaN LED Epi på Sapphire

850nm och 940nm infraröd LED-skiva

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

GaN Wafers to Fabricate LED Devices

GaN LED Structure Epitaxy on Flat or PSS Sapphire Substrate

GaN Epitaxial Growth on Sapphire for LED

Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition

Si-based GaN PIN Photodetector Structure

For more foundry services, please visit: GaN Foundry Services for LED Fabrication

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