GaN HEMT epitaxiell skiva

GaN HEMT epitaxiell skiva

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. Thanks to GaN technology, PAM-XIAMEN now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon, and AlGaN/GaN on sapphire template.

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GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. The nucleation layer, like AlGaN or AlN, is used to prevent the substrate material from diffusing into the GaN epitaxial layer. The transition layer may contain hierarchical AlGaN, AlN/GaN superlattice or multilayer AlN to balance the stress between the GaN and the substrate. The higher the Al content in the barrier layer of AlGaN, the higher the 2DEG concentration at the heterojunction. Meanwhile, the lower the threshold voltage of the device, and the higher the current capacity. As the Al ratio increasing, the degree of heterogeneous crystal lattice mismatch will be higher, resulting in a decrease in gallium nitride HEMT electron mobility and a decrease in current capacity.

The High Electron Mobility Transistor (HEMT) is developed based on GaN with unique heterostructure and two-dimensional electron gas. The GaN HEMT advantages include high breakdown strength, low on-resistance and faster The switching speed, which is very suitable for medium and low voltage and medium and small power systems, such as travel adapters, wireless chargers, AC-DC converters, smart home appliances, etc. The epitaxial wafer with HEMT structure is more attractive currently for high-frequency converters, in which GaN HEMT breakdown voltage is 600~650 V. With the rapid development of gallium nitride HEMT epi technology, the price of GaN HEMT devices will be competitive, which can gain large GaN HEMT market for GaN HEMT manufacturers. Moreover, due to the gallium nitride HEMT reliability, it can be widely used in industrial fields, such as photovoltaic inverters, energy storage systems, and electric vehicles.

1. GaN HEMT Material: Available size:2”,4”,6”,8”:

More specific parameters of gallium nitride HEMT wafer for D-mode GaN HEMTs, E-mode GaN HEMTs, GaN HEMT power amplifier and RF, please refer to:

GaN på Si för Power, D-mode

GaN på Si för Power, E-mode

GaN på Si för RF

GaN på Sapphire för Power

GaN på Sapphire för RF

GaN på SiC för RF

GaN på GaN

We are expert in HEMT structure, we also offer GaN HEMT epi wafer for many years.
For silicon substrate, we need to know if you grow GaN HEMT on silicon for POWER or RF, it is different. If needed, please contact [email protected] for details.
For SiC, you should use semi-insulating.
Or you can buy AlGaN/GaN HEMT structure on these three structure from us.

2. Now we show you an example as follows:

2.1  2 "(50,8 mm) GaN HEMT epitaxiella skivor

We offer 2″(50.8mm) gallium nitride HEMT Wafers, the GaN HEMT structure is as follows:

Struktur (från topp till botten):

* Odopad GaN locket (2 ~ 3 nm)

AlxGa1-xN (18 ~ 40nm)

AIN (buffertskikt)

un-dopad GaN (2 ~ 3um)

safirsubstrat

* Vi kan använda Si3N att ersätta GaN på toppen, är vidhäftningen stark, det är belagt med sputter eller PECVD.

2.2 AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

Lager # Komposition Tjocklek X dopningsmedel bärarkoncentration
5 GaN 2 nm
4 AlxGa1-xN 8nm 0.26
3 AIN 1 nm Un-dopad
2 GaN ≥1000 nm Un-dopad
1 Buffert / övergångsskikt
Substrat Kisel 350μm / 625μm

2.3  2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si

2.3.1 Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (GaN) Hemt (HEMT) på kiselsubstratet.

Krav Specifikation
AlGaN / GaN HEMT Epi Wafer på Si  
AlGaN / GaN HEMT struktur hänvisa 1,2
substrat Material Kisel
Orientering <111>
tillväxtmetod Float Zone
ledningstyp P eller N
Storlek (tum) 2” , 4”
Tjocklek (^ m) 625
Baksida Grov
Resistivitet (Ω-cm) >6000
Rosett (| im) ≤ ± 35

2.3.2 Epi structure: Crack-free Epilayers

Lager # Komposition Tjocklek X dopningsmedel bärarkoncentration
5 GaN 2 nm
4 AlxGa1-xN 8nm 0.26
3 AIN 1 nm Un-dopad
2 GaN ≥1000 nm Un-dopad
1 Buffert / övergångsskikt
Substrat Kisel 350μm / 625μm

2.3.3 Electrical Properties of the AlGaN/GaN HEMT structure

2DEG rörlighet (vid 300 K): ≥1,800 cm2 / Vs

2DEG Sheet Carrier Densitet (vid 300 K): ≥0.9 × 1013 cm-2

RMS Ytråhet (AFM): ≤ 0,5 nm (5,0 | j, m x 5,0 ^ m avsöknings Area)

2.4  2″(50.8mm)AlGaN/GaN on sapphire

För specifikation av AlGaN / GaN på safir mall, vänligen kontakta vår försäljningsavdelning: [email protected]

GaN HEMT Applications: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

3. Explanation of AlGaN/Al/GaN HEMTs:

Nitrid HEMTs håller intensivt utvecklats för hög effekt elektronik i högfrekventa förstärknings- och effektomkopplingstillämpningar. Ofta hög prestanda i DC-drift förloras när HEMT omkopplas - till exempel, kollapsar den på-ström när grindsignalen är pulsad. Man tror att sådana effekter är relaterade till ladda fånga som maskerar effekten av gate på strömflödet. Fältplåtarna på emitter- och styrelektroder har använts för att manipulera det elektriska fältet i anordningen, mildra sådana ström-kollaps fenomen.

4. GaN EpitaxialTechnology — Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:

GAN HEMT epitaxiella skivor (GAN EPI-wafers)

PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers

5. GaN Device:

GaN SBD

GaN HEMT

6. Test Characterization Equipment:

Kontaktlös Sheet Resistance

Laser Thin Film Tjocklek Mapping

Hög Temp / hög fuktighet Reverse Bias

Värmechock

DIC Nomarski Mikroskop

Atomkraftsmikroskop (AFM)

Surface Defectivity Scan

Hög Temp Reverse Bias

4PP Sheet Resistens

Kontaktlös Hall Mobility

temperaturcykel

Röntgendiffraktions (XRD) / Reflektans (XRR)

ellipsometer Tjocklek

profilometer

CV Tester

7. Foundry Fabrication:

we also offer foundry GaN HEMT fabrication in the following process as follows:

MOCVD Epitaxi

Metall Sputtring / E-Beam

Torr / våt Metal / Genomslags Etch

Thin Film PECVD / LPCVD / Sputtring

RTA / Furnace Glödgning

Fotolitografi (0.35um min. CD)

Jonimplantation

More fabrication services, please visit: GaN tillverkningstjänster för HEMT-enheter

GaN / SiC HEMT epi-wafers

Aluminium gallium arsenide epi wafer

650V GaN FETs Chip for Fast Charge

GaN MOSFET Structure:

GaN MOSFET Structure on SiC Substrate

More about GaN HEMT structures, please read:

Vad påverkar 2DEG av AlGaN/GaN HEMT Wafer?

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