PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html.
The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field [...]
2024-04-17meta-author
The behaviour of n-6H SiC in HF- and KOH-based electrolytes is studied. It is shown that at the room temperature the dissolution of SiC in these electrolytes is accompanied by a number of side effects, such as passivation of the etched surface with an [...]
2019-03-25meta-author
GaAs(111) crystal wafer
PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer:
1.Wafer List
GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
2019-04-22meta-author
PAM-XIAMEN can supply AlN on Sapphire wafers, more specifications you can find in: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html
At present, metal organic chemical vapor deposition (MOCVD) is considered one of the most widely used epitaxial techniques for AlN, but it always faces problems such as long growth cycles, high [...]
2024-03-22meta-author
The objective of this work is to analyze the effects of argon ion irradiation process on the structure and distribution of Te inclusions in Cd1-xZnxTe crystals. The samples were treated with different ion fluences ranging from 2 to 8 × 1017 cm−2. The state of the samples before [...]
PAM XIAMEN offers LD Bare Bar for 1470nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 1470nm
Filling Factor: 19%
Output Power: 25W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author