Driftskanaltemperatur i GaN HEMT: DC kontra RF accelererad livslängd

slingor

• Giltigheten av att jämföra DC- och RF HTOL-testresultat är en nyckelfråga vid tillförlitlighetstestning.
•We investigate whether DC and RF self heating, and therefore channel temperature, are equivalent.
•For this purpose, an experimentally validated electrothermal model has been developed.
•Channel temperature is found to be equivalent during RF and DC operation at typical operating voltages.

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Abstrakt
Channel temperature is a key parameter for accelerated life testing in GaN HEMTs. It is assumed that self-heating is similar in RF and DC operations and that DC test results can be applied to RF operation. We investigate whether this assumption is valid by using an experimentally calibrated, combined electrical and thermal model to simulate Joule heating during RF operation and compare this to DC self-heating at same power dissipation. Two cases are examined and the implications for accelerated life testing are discussed: typical (30 V) and high (100 V) drain voltages.

Nyckelord
GaN; HEMT; Reliability; Temperature; Simulation; Thermography; RF
Source:Sciencedirect

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