Products

  • Photo Mask
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    Photo Mask

    PAM-XIAMEN Offers Photomasks

    A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.

  • CdZnTe (CZT) Wafer
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    CdZnTe (CZT) Wafer
    Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
  • CZT Detector
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    CZT Detector

    PAM-XIAMEN supplies a series of CZT products, which are including detectors, modules, probes, systems, amplifiers, analyzers, supply and furnace.

  • Germanium Wafer
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    Ge(Germanium) Single Crystals and Wafers
    PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.
  • InP waferInP wafer
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    InP wafer

    PAM-XIAMEN offers VGF InP(Indium Phosphide) wafer with prime or test grade including  low dope, N type or semi-insulating. The mobility of InP wafer is different in different type, low doped one>=3000cm2/V.s, N type>1000 or 2000cm2V.s(depends on different doping concentration), P type: 60+/-10 or 80+/-10cm2/V.s(depends on different Zn doping concentration), and semi-insulting one>2000cm2/V.s, the EPD of Indium Phosphide is below 500/cm2 normally.

  • InAs waferInAs wafer
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    InAs wafer

    PAM-XIAMEN offers Compound Semiconductor InAs wafer – indium arsenide wafer which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). In addition, InAs single crystal has high electron mobility and is an ideal material for making Hall devices.

  • InSb waferInSb wafer
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    InSb wafer

    PAM-XIAMEN offers Compound Semiconductor InSb wafer – Indium antimonide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100). Indium antimonide doped with isoelectronic(such as N doping) can reduce the defect density during the indium antimonide thin films manufacturing process.

  • GaSb WaferGaSb Wafer
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    GaSb Wafer

    PAM-XIAMEN offers Compound Semiconductor GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111) or (100).

  • GaP WaferGaSb Wafer
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    GaP Wafer – Can’t Offer Temporarily
    PAM-XIAMEN offers Compound Semiconductor GaP wafer – gallium phosphide wafer which is grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
  • GaAs Wafer (Gallium Arsenide)
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    GaAs (Gallium Arsenide) Wafers

    As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor C doped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, C doped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

  • GaAs Epi Wafer
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    GaAs Epiwafer

    PAM-XIAMEN is manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom GaAs epiwafer structures to meet customer specifications, please contact us for more information.

  • Freestanding GaN substrate
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    Freestanding GaN substrate

    PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.