PAM XIAMEN offers KCl Crystal.
KCl (100), 10x10x 2.2-2.5 mm 1 Side polished
Crystal: KCl Crystal
Orientation: <100> +/-2.5 o
Size: 10x10x 2.2-2.5 mm
Polished: one side polished
Purity: 99.9%
Surface finish (RMS or Ra) : < 100A
Package: 1000 class clean plastic bag sealed
Note: KCl [...]
2019-05-07meta-författare
Nichia Develops Higher Power Green Laser Diodes
CompoundSemi News Staff
November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied [...]
2013-02-28meta-författare
Indium gallium arsenide (InGaAs) sensors are supplied by PAM-XIAMEN, a InGaAs sensor manufacturer. Its working principle is actually the principle of shortwave infrared (SWIR). And the working principle of SWIR-based sensor is similar to that of CMOS-based sensor, converting photons into electrons. SWIR technology [...]
2021-07-15meta-författare
PAM XIAMEN offers 3″ Dummy grade silicon wafer Thickness:340-380μm.
3″ Dummy grade / Mechanical Grade silicon wafer, SSP.
MUST be Single Side Polished and Single Crystal Silicon.
Thickness 340-380μm, no scratch, no films, no etch patterns or residues
For more information, please visit our [...]
2019-08-22meta-författare
GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic.
Basic Parameters for Wurtzite crystal structure at 300K:
Breakdown field
~5 x 106 V cm-1
Mobility electrons
=< 1000 cm2 V-1 s-1
Mobility holes
=< 200 cm2 V-1 s-1
Diffusion coefficient [...]
2012-05-21metaförfattare
GaN
At present, gallium nitride (GaN) technology is no longer limited to power applications, and its advantages are also infiltrating into all corners of the RF/microwave industry, and the impact on the RF/microwave industry is growing, and should not be underestimated, because it can be [...]
2019-03-19meta-författare