Silicon Ingots -1

Silicon Ingots -1

Silicon Ingots -1

PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!

 

 

 

All diameters!

Note: Material – CZ unless noted
Kg in Properties of Silicon
Stock
Silicon Ingots
Material Description
2.7 FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats
1.15 FZ 6″Ø×25mm ground ingot, n-type Si:P[100], (7,025-7,865)Ohmcm, MCC Lifetime=7,562µs, 1 SEMI Flat
1.6 FZ 6″Ø×27mm ground ingot n-type Si:P[100], (7,503-7,875)Ohmcm, 1Flat
3.8 FZ 6″Ø×80mm ingot, n-type Si:P[100] ±2°, (57-62)Ohmcm, 1 SEMI Flat, MCC Lifetime=15,799µs
4.53 FZ 6″Ø×101mm ground ingot, n-type Si:P[100], (0.350-0.353)Ohmcm, NO Flats
2.4 FZ 6″Ø×52mm ground ingot, n-type Si:P[100], (23.86-25.05)Ohmcm, MCC Lifetime=16,352µs, NO Flats
5.34 FZ 6″Ø×124mm n-type Si:P[100], (0.556-0.600)Ohmcm, Ground, NO Flats
10.68 FZ 6″Ø×248mm ground ingot, n-type Si:P[100], (0.557-0.565)Ohmcm, NO Flats
11.91 FZ 6″Ø×275mm ground ingot, n-type Si:P[100], (0.307-0.313)Ohmcm, NO Flats
1.7 FZ 6″Ø ingot n-type Si:P[100], Ro: 6,285-10,516 Ohmcm, MCC Lifetime>6000μs, As-Grown, (1 ingot: 37.8mm) NO Flats
2.5 FZ 6″Ø×53mm ground ingot, n-type Si:P[100], Ro=~2.7 Ohmcm, MCC Lifetime=7,903µs, NO Flats
3.05 FZ 6″Ø ingot n-type Si:P[100], Ro: 6,218-10,002 Ohmcm, (1 ingot: 70mm) NO Flats
10.11 FZ 6″Ø×236mm ground ingot, n-type Si:P[100], (25.70-26.29)Ohmcm, Lifetime=2,218us, NO Flats
6.49 FZ 6″Ø×206mm ground ingot, n-type Si:P[100], (4.65-5.11)Ohmcm, MCC Lifetime=2,225µs, NO Flats
1.4 FZ 6″Ø×34mm ground ingot, n-type Si:P[111], Ro>4,800 Ohmcm, T>1,000μs, 1 JEIDA Flat (47.5mm)
11.88 FZ 6″Ø ingot Intrinsic Si:-[100] ±2.0°, Ro: >10,000 Ohmcm, NO Flats
5.5 FZ 5″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,879-3,258 Ohmcm, As-Grown, (1 ingot: 172mm) SEMI, 1Flat
1.7 FZ 5″Ø×59mm ground ingot, n-type Si:P[111], (5,400-7,200)Ohmcm, MCC Lifetime>1,200µs, 1 SEMI Flat
3.36 FZ 5″Ø ingot n-type Si:P[111] ±2°, Ro: 70-110 Ohmcm, Ground, (1 ingot: 115mm) SEMI, 1Flat
0.3 FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs, 1 SEMI Flat
1.06 FZ 4″Ø×55mm p-type Si:B[100], (1,000-2,000)Ohmcm, MCC Lifetime>700µs, 1 SEMI Flat
0.96 FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 2,600-3,800 Ohmcm, (1 ingot: 99mm) NO Flats
4.04 FZ 4″Ø×210mm p-type Si:B[100] (500-1,000)Ohmcm, MCC Lifetime=700µs, Ground, NO Flats
1.78 FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 133-155 Ohmcm, MCC Lifetime>7400μs, Ground, (1 ingot: 169mm) NO Flats
2.79 FZ 4″Ø×143mm ingot p-type Si:B[100]±2°, Ro=2,100 Ohmcm {actual=(1,953-2,265)}, NO Flats
2.43 FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 16,000-19,000 Ohmcm, (1 ingot: 125mm) NO Flats
1.94 FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 1,900-3,600 Ohmcm, (1 ingot: 100mm) NO Flats
5.3 FZ 4″Ø×320mm ingot p-type Si:B[100], (1.0-1.1)Ohmcm, MCC Lifetime=1,511µs, NO Flats
4.66 FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, As-Grown, (1 ingot: 250mm) 1Flat
4.66 FZ 4″Ø ingot p-type Si:B[111] ±0.5°, Ro: 8,220-12,252 Ohmcm, (1 ingot: 237mm) NO Flats
0.74 FZ 4″Ø×38mm ground ingot, n-type Si:P[100] (0.8-2.5) {0.91-2.29}Ohmcm, Lifetime >300µs, Ox<1E16/cc, C<1E16/cc, NO Flats
1.49 FZ 4″Ø×73mm, ingot n-type Si:P[100] ±2.0°, (198-200)Ohmcm, Lifetime=12,904µs, NO Flats
0.7 FZ 4″Ø×40mm ground ingot, n-type Si:P[100] Ro>5,000Ohmcm {4,980-6,370}, Lifetime>980µs, NO Flats
0.99 FZ 4″Ø ingot n-type Si:P[100], Ro: 402-434 Ohmcm, NO Flats
1.33 FZ 4″Ø ingot n-type Si:P[100], Ro: 2,886-3,624 Ohmcm, (1 ingot: 129mm) NO Flats
3.89 FZ 4″Ø ingot n-type Si:P[100] ±2°, Ro: 1-2 Ohmcm, MCC Lifetime>300μs, (2 ingots: 50mm, 158mm) SEMI, 1Flat
4.87 FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs, NO Flats
2.07 FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm, NO Flats
5.7 FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs, NO Flats
1.02 FZ 4″Ø ingot n-type Si:P[551] ±2°, Ro:>4,800Ohmcm, Ground, SEMI, 1Flat (47.5mm), T>1,000μs
0.6 FZ 4″Ø ingot n-type Si:P[111] ±2°, Ro: 6,100-7,800 Ohmcm, MCC Lifetime>1300μs, (1 ingot: 38mm) NO Flats
10 FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, NO Flats
5.78 FZ 4″Ø ingot Intrinsic Si:-[111] ±0.5°, Ro: >20,000 Ohmcm, Ground, (3 ingots: 126mm, 106mm, 81mm) NO Flats
0.86 FZ 3″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 21mm, 54mm) NO Flats
4.05 FZ Ingot 3″Ø×(112+265)mm, p-type Si:B[111] ±2°, (1,800-3,000)Ohmcm, Lifetime>1,000μs, SEMI, NO Flats
1 FZ 3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1,000-2,000 Ohmcm, Ground, NO Flats
0.55 FZ 3″Ø×102mm ingot p-type Si:B[111] ±2°, (4,400-4,600)Ohmcm, Ground, SEMI, 1Flat
4.4 FZ 3″Ø×(129+131+147)mm ground ingot, n-type Si:P[100] ±2°, (40-60)Ohmcm, NO Flats
2.5 FZ 3″Ø×(117+135)mm ground ingot, n-type Si:P[100] ±2°, Ro>5,000 Ohmcm, MCC Lifetime>1,000µs, NO Flats
4.63 FZ 3″Ø ingot n-type Si:P[111] ±2.0°, Ro: 5,750-6,850 Ohmcm, MCC Lifetime>6,000μs, As-Grown, (2 ingots: 250mm, 239mm) NO Flats
5.18 FZ NTD 3″Ø×(197+277)mm ground ingot, n-type Si:P[111], (50-60)Ohmcm, MCC Lifetime>400μs, Ox<1E16/cc, C<1E16/cc, RRV<10%, 1 SEMI Flat
1 FZ 3″Øx90mm ground ingot, n-type Si:P[111], (2,000-6,000)Ohmcm, MCC Lifetime>2,000μs, Ox<1E16/cc, C<1E16/cc, RRV<35%, 1 SEMI Flat
2 FZ 3″Ø×188mm ground ingot, n-type Si:P[111] ±0.5°, Ro:>2,000 {2.330-3,300}Ohmcm, MCC Lifetime>1,640µs, NO Flats
4.24 FZ 3″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >20,000 Ohmcm, NO Flats
2.29 FZ 3″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >17,500 Ohmcm, NO Flats
4.49 FZ 2″Ø×(132+124+124+123+115+107+100+99)mm ingots, p-type Si:B[100] ±2°, (1,000-3,000)Ohmcm, 1 SEMI Flat
0.32 FZ 2″Ø×64.5mm ingot p-type Si:B[100]±2º, (2,879-3,258)Ohmcm, NO Flats
4.3 FZ 2″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 {1.29-1.32} Ohmcm, MCC Lifetime>1777μs, (2 ingots: 58mm, 84mm) NO Flats
0.16 FZ 2″Ø×38mm ingot, p-type Si:B[100]±2º, Ro:~2,900Ohmcm, 1 SEMI Flat, made by SPC
8.32 FZ 2″Ø×(392+342+304+263+250+175)mm ingots, p-type Si:B[111]±2º, (2,000-5,000)Ohmcm, 1 SEMI Flat
0.4 FZ 2″Ø ingot n-type Si:P[100] ±2°, Ro: ~2.7 Ohmcm, MCC Lifetime>7903μs, Ground, (2 ingots: 38mm, 39mm)
2.97 FZ 2″Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm, NO Flats
0.55 FZ 2″Ø×26mm ground ingot, n-type Si:P[111]±2º, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs, NO Flats
1.29 FZ 2″Ø×(97+64+56+48)mm ingots, Intrinsic Si:-[100]±2º, Ro>10,000 Ohmcm, NO Flats
2.41 FZ 2″Ø×(128+81+80+79+75+71+71+71+71)mm ingots, Intrinsic Si:-[100], Ro>20,000 Ohmcm, NO Flats
1.21 FZ 2″Ø×(160+98)mm ingots, Intrinsic Si:-[111]±2º, Ro>12,000 Ohmcm, NO Flats
0.5 FZ 1″Ø ingot p-type Si:B[100] ±2°, Ro:1-3 Ohmcm, (5 ingots: 76mm, 80mm, 80mm, 82mm, 82mm) NO Flats, Lifetime=300µs
0.1 FZ SCRAP, Improperly cored 1″Ø ingot p-type Si:B[100] ±2°, Ro:1-3Ohmcm, (1 ingot: 81mm) Improper flat running for 70% of the length of the ingot
0.24 FZ 1″Ø ingot p-type Si:B[100] ±2°, Ro:3,400-4,100Ohmcm, Ground, (3 ingots: 75mm, 76mm, 77mm) SEMI, 1Flat
1 FZ 1″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,879-3,258 Ohmcm, (1 ingot: 31mm, 0.05Kg, $200 for the piece) NO Flats
0.25 FZ 1″Ø(37+37+38+38)mm ground ingot, n-type Si:P[100]±2°, Ro: ~2.7 Ohmcm, MCC Lifetime>7,000μs
0.86 FZ 1Ø×60mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm, NO Flats
0.9 FZ Silicon Ingot, 48mmØx217mm, n-type Si:P[111], Ro=~300 Ohmcm, (p-type Ro>3,000 Ohmcm), NO Flats
2 FZ 1″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, NO Flats
2 FZ 1″Ø ingot Intrinsic Si:-[111] ±2.0°, Ro: >17,500 Ohmcm, NO Flats
1 FZ 6.35mmØ ingot Intrinsic Si:-[111], Ro: >10,000 Ohmcm, (1 lot of 8 rods, each 51mm long)
1 FZ 6.35mmØ ingot Intrinsic Si:-[111], Ro: >10,000 Ohmcm, (1 lot of 11 rods, each ranging from 15mm to 49mm long)
10 FZ 0.5″Ø×110mm ingot, n-type Si:P[100], Ro: 5,497-10,293 Ohmcm, MCC Lifetime>6,500µs. 10 pieces, each piece is 0.5″Ø, 0.029Kg and 100mm long.
6.8 FZ SCRAP material p-type, Ro: 1-1,000 Ohmcm
2.24 FZ SCRAP material p-type, Ro: 1,000-10,000 Ohmcm
6.78 FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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