Related Posts
Thermal Oxide Wafers, 2 – 4″ Research Grade-4
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
GAAS GALLIUM ARSENIDE CRYSTAL SUBSTRATES
PAM XIAMEN offers GaAs Gallium Arsenide crystal substrates. MAIN PARAMETERS FOR GAAS GALLIUM ARSENIDE CRYSTAL SUBSTRATES single crystal Dopant Conduction type Carrier concentration cm-3 Growth method Max size GaAs None SI / LEC Si N >5×10^17 HB Cr SI / Dia. 3″ Fe N ~2×10^18 Zn P >5×10^17 Sizes (mm) 25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, 2 inch diameter Special size and orientation options are available upon request Surface Roughness Surface roughness(Ra): <= 5A Polishing Single or double side polished For [...]
2019-03-11meta-author
SOI Wafer ( Si On Insulator )
PAM XIAMEN offers SOI Wafer ( Si On Insulator). SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) SOI Wafer: 6″, 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped ) For more information, please visit [...]
2019-04-29meta-author
Single crystal CdS window
PAM XIAMEN offers Single crystal CdS window. CdS (0001) 5 mm X 5 mm x 0.5 mm , 1 Sides polished CdS (0001) 5 mm X 5 mm x 0.5 mm , 2 Sides polished CdS (0001) 5 mm x 5 mm x1.0 mm, [...]
2019-04-19meta-author
InGaAs Structure Wafer
InGaAs Structure Wafer Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or [...]
2016-04-25meta-author
InGaAs Structure Wafer
Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers
Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on [...]
2014-08-10meta-author
semico, semiconductor wafer, semiconductor wafer manufacturers