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Ge single crystal(Prime grade)-4
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(111). 2″ Diameter Wafer 2″ wafers(111) Ge <111> undoped Ge Wafer . Undoped, 2″ dia x 0.5 mm, 1SP (111) R >50 ohm.cm Ge Wafer . Undoped, 2″ dia x 0.5 mm, 2SP (111) R >50 Ohm.cm Ge<111> [...]
2019-04-23meta-author
X-ray diffraction analysis of LT-GaAs multilayer structures
X-ray diffraction analysis of LT-GaAs multilayer structures Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity [...]
2013-11-25meta-author
Low dimensional structures, X-ray diffraction
Diced Silicon Wafers
PAM XIAMEN offers Diced Silicon Wafers.Wafer thickness could be customized. PAM XIAMEN and our partners provide researchers with creative silicon wafer and other substrate dicing solutions. Using precision diamond saws we can cut a variety of hard brittle materials. Our Services Include. Small quantity wafer dicing at [...]
2019-02-20meta-author
Silicon on Sapphire (SOS) Introduction – Can’t Offer Temporarily
The SOS technology uses single crystal sapphire or spinel insulator material as the substrate and grows a single crystal silicon film through a high-temperature epitaxy process to fabricate semiconductor integrated circuits. It is a kind of SOI CMOS technology. The silicon on sapphire structure [...]
2019-05-16meta-author
(20-21) Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-21)-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 106 Ω.cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author