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2012-03-06

Ti: Sapphire Crystal

PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]

2019-07-24meta-author

12″ Silicon Wafer

PAM XIAMEN offers 12″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 12″ 750 P/E MCZ 1-100 TEST grade, SEMI notch, TTV<25µm p-type Si:B [100] 12″ 775 P/P MCZ 1-100 Prime, SEMI notch, TTV<3µm p-type Si:B [100] 12″ 775 P/E MCZ 1-100 Prime, SEMI notch,TTV<10µm p-type Si:B [100] 12″ 775 P/P 0.01-0.02 Prime, SEMI notch,TTV<4µm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]

2019-03-04meta-author

Lithium Chip

PAM XIAMEN offers Lithium Chip. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D. SPECIFICATIONS: Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension 16 mm x 0.6 mm (diameter x [...]

2019-05-07meta-author

The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding

Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]

2020-03-09meta-author

4″CZ Prime Silicon Wafer-12

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12 4″ CZ wafer, N type Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Diameter: 100 mm Thickness: 525 ± 25 μm Surface: P/E Source: Prolog SEMI Prime, 1Flat, hard cst For more information, send us email at [email protected] and [email protected]

2020-04-23meta-author

4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]

2019-07-04meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

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Ti: Sapphire Crystal

12″ Silicon Wafer

Lithium Chip

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