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Ti: Sapphire Crystal
PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]
12″ Silicon Wafer
PAM XIAMEN offers 12″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 12″ 750 P/E MCZ 1-100 TEST grade, SEMI notch, TTV<25µm p-type Si:B [100] 12″ 775 P/P MCZ 1-100 Prime, SEMI notch, TTV<3µm p-type Si:B [100] 12″ 775 P/E MCZ 1-100 Prime, SEMI notch,TTV<10µm p-type Si:B [100] 12″ 775 P/P 0.01-0.02 Prime, SEMI notch,TTV<4µm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
Lithium Chip
PAM XIAMEN offers Lithium Chip. Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D Lithium chip is widely used for Li-ion and Li metal rechargeable battery R&D. SPECIFICATIONS: Purity 99.9% Lithium Melting Point 180.5 °C Density 0.534 g/cm3 Color Silver Dimension 16 mm x 0.6 mm (diameter x [...]
The Characteristics of Interface Microstructures in Germanium/SiO2 Low Temperature Wafer Bonding
Ge/SiO2 direct wafer bonding by O2-plasma pretreatment was investigated. The bonding interfaces of Ge/SiO2 low temperature direct wafer bonding were characterized by transmission electron microscopy. The perfectly atomic level Ge/SiO2 bonding was achieved after a 1500C annealing for 60 hours. The excessive O2-plasma exposure resulted in micro-crack [...]
4″CZ Prime Silicon Wafer-12
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12 4″ CZ wafer, N type Orientation: (100)±0.5 Type/Dopant: n/phosphorus Resistivity: 1-5 Ω-cm Diameter: 100 mm Thickness: 525 ± 25 μm Surface: P/E Source: Prolog SEMI Prime, 1Flat, hard cst For more information, send us email at [email protected] and [email protected]
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM CZ DIAMETER 4 inch (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 525µm +/-25µm SSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 8 – [...]