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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO
Highlights •MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates. •In-depth structural characterizations showing no back-etching of ZnO. •Chemical lift-off and wafer-bonding of the structure on float glass. •Structural characterizations of the device on glass. Abstract p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]
2016-02-03meta-author
GaN substrate, GaN Wafer, InAlN thin films
(10-11) Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(10-11)-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
NREL inks technology agreement for high efficiency multijunction solar cells
A 6-inch MicroLink Devices high-efficiency, lightweight and flexible ELO IMM solar cell wafer. Credit: MicroLink Devices The U.S. Department of Energy’s (DOE) National Renewable Energy Laboratory (NREL) has entered into a license agreement with MicroLink Devices, Inc. (Niles, IL) to commercialize NREL’s patented inverted metamorphic [...]
2017-11-16meta-author
Hybrid Chips of Gallium Nitride and Silicon
Hybrid Chips of Gallium Nitride and Silicon Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron [...]
M Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
LD Bare Bar for [email protected] 4mm
PAM XIAMEN offers LD Bare Bar for [email protected] 4mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 38% Output Power: 250W Cavity Length:4mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected]er.com and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author