Leading manufacturer of compound semiconductor material in China
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
PAM XIAMEN offers 2 inch Aluminum Nitride AlN Template on sapphire. 2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE (0001) SEMI-INSULATING TYPE 4000~5000NM Conductivity type: Semi-insulating AlN Substrate: Sapphire Dimension: Φ50.8 mm ± 0.1 mm Thickness: 4 ~ 5 um (4000~5000 nm) Edge Exclusion Zone: < 2 mm Usable area: >90% Orientation: C plane (0001) ± 1° Total [...]
PAM XIAMEN offers Indium Foil. Indium ( In ) Foil: 100 mm (W) x 100 mm ( L） x 0.1 mm ( T) Polycrystal In Foil Purity: > 99.995% Size: 0.10 mm thickness x 100mm width x 100 mm Length Surface finish: as cold rolling [...]
PAM XIAMEN offers GaN Template on Silicon. Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride [...]
PAM XIAMEN offers high-quality Bi2Se3. Molar mass: 654.8 g/mol Appearance: Dull grey Lattice Parameters: a=4.14 A, c=28.7 A Density: 6.82 g/cm^3 Melting point:710 °C (1,310 °F; 983 K) Structure: Hexagonal Displaying products 1 – 1 of 1 results Bi2Se3 Single crystal (0001) orn. 10x10x1.0 mm, both sides polished [...]
The Development Trend of LED Wafer Chip Industry in 2018 Abstract Since 2016, the LED industry has been in a period of rapid development, and by 2018, a new pattern has emerged. Throughout the entire LED industry chain, we can see that the LED wafer chip [...]
