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What Are Semiconductors?
Most of today’s electronic products, such as computers, mobile phones, or digital tape recorders, have a very close connection with semiconductors. So, what is a semiconductor? The semiconductor definition can be illustrated from different perspectives. Firstly, let’s know what are the semiconductor materials. Please see the table of common semiconductor materials below: Type Group Material Simple substance/Element [...]
What is the Key Parameters of SiC Epitaxial Wafer?
The most basic and key parameters of SiC epitaxial materials are the thickness and doping concentration uniformity.In fact, the epitaxial parameters mainly depend on the device design. For example, the epitaxial parameters are different according to the different voltage levels of the devices. Generally, [...]
FZ Silicon Ignot Diameter 60+1mm-1
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]
3″ FZ Silicon Ingot with Diameter 76mm
PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
(100) Oriented Silicon Wafers-4
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2929 n-type Si:P [100] 4″ 525 P/E 43657 SEMI Prime, 2Flats, Empak cst PAM2930 n-type Si:P [100] 4″ 525 P/E 43657 SEMI Prime, 2Flats, Empak cst PAM2931 n-type Si:P [100] 4″ 224 P/E 5–10 SEMI Flats (two), Empak cst, Cassette of [...]
GaAs Crystal with Low Defects and Dopants
Semi-insulating GaAs (gallium arsenide) crystal with low defects and dopants can be offered by PAM-XIAMEN, one of gallium arsenide producers. Semi-insulating GaAs crystal refers that there is excess arsenic during the GaAs crystal growth process, leading to crystallographic defects, which is arsenic antisite defects. [...]