Related Posts
InGaAs/InP epi wafer for PIN
InGaAs/InP epi wafer for PIN We can offer 2″ InGaAs/InP epi wafer for PIN as follows: InP Substrate: InP Orientation: (100) Doped with Fe, Semi-Insulating wafer Size: 2″ diameter Resistivity:>1×10^7)ohm.cm EPD:<1×10^4 /cm^2 Single side polished. EPI layer : InxGa1-xAs Nc>2×10^18 /cc (using Si as dopant), Thickness :0.5 um (+/- 20%) Roughness of epi-layer, Ra<0.5nm Source: PAM-XIAMEN If you need [...]
2013-10-15meta-author
InGaAs/InP epi wafer for PIN
GaAs (100) crystal-1
PAM XIAMEN offers GaAs (100) undoped crystal . GaAs, 10×5,10×10 GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×3 x0.5 mm, 2SP GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×5 x0.5 mm, 2SP GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp, GaAs [...]
2019-04-22meta-author
20 years and counting for the GaN LED
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
2012-03-06meta-author
SiO2 (single crystal quartz)-3
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
Analog Multi-channel Analyzer
AMCA-01 is an analog multi-channel equipment which used for energy spectrum analyze for variety of radiations detectors. Added with upper computer software, it can collect analog energy spectral signal, drawing energy spectrum and analyzing it, and counting full energy peak resolution. The software also [...]
2019-04-25meta-author
MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]
2019-08-19meta-author