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Blue GaN LD Wafer
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers. 1. Specification of 440-460nm Blue GaN LD wafer (PAM-190909-GAN-LD) Item Descriptions Materials Substrate blue laser 440-460nm InGaN 2 inch Sapphire substrate*** GaN Blue LD EPI Wafer Spec Spec LD Epitaxial Wafer Size Growth MOCVD Diameter 50.8 ± 0.2 [...]
2018-08-22meta-author
Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer
Highlights •A recessed structure was used on the GaAs/Si solar cells to reduce the current path. •The associated series resistance was reduced by a recessed structure. •The carrier recombination loss was improved due to pyramid-like recessed structure. In this study, epitaxial layers of GaAs-based solar cells were grown [...]
2015-11-25meta-author
gaas wafer
Structure for InGaAs photodetectors
Structure for InGaAs photodetectors We offer the wafer structure InGaAs photodetectors as follows: Material X Thickness (nm) Dopant Doping concentration InP 1000 N (Sulfur) 3e16 In(x)GaAs 0.53 3000 U/D 5e14 InP 500 N (Sulfur) 3e16 Substrate SI (Fe) Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected]
2015-02-02meta-author
ingaas apd, ingaas detector, ingaas lattice, ingaas photodiode
PBN-PG composite heater
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns. PG ribbon thickness 0.05mm Main Heating Zones Front surface: Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher Auxiliary Heating Zones Back surface: Outer element [...]
2019-03-13meta-author
(Al,In)GaN laser diodes with optimized ridge structures
(Al,In)GaN laser diodes with optimized ridge structures We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]
2013-03-27meta-author
Why do We Need High Purity Semi-insulating SiC Wafer?
When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity of silicon carbide should be very high, but [...]
2020-08-25meta-author