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80+1mm FZ Si Ingot-2
PAM XIAMEN offers 80+1mm FZ Si Ingot-2 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-18meta-author
Annual Silicon Wafer Production
PAM XIAMEN offers Silicon wafers. We are often asked how many silicon wafers are produced annually. The answer depends on a more specific question including: What Diameter What Country or Entire World Semiconductor or Solar industries or both Monitor Grade, Test Grade, Prime Grade Above are just some terms that need [...]
2019-02-26meta-author
4″ Silicon Wafer-2
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 500-550 P/E/WTOx 100 N Phos CZ -100 1-50 2900-3100 P/E PRIME 100 N Phos CZ -100 50-70 4850-5050 P/E PRIME 100 N Phos CZ -100 1-50 5900-6100 P/E PRIME 100 N Phos CZ -100 >10 9900-10100 P/P PRIME 100 N Phos CZ -111 1-10 4000-6000 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/P PRIME 100 N Phos FZ -111 2000-4000 275-325 P/P PRIME 100 N Phos CZ -111 450-500 P/P PRIME 100 N Phos FZ -111 > 20000 475-525 P/P PRIME 100 N As CZ -111 .001-.005 500-550 P/E PRIME 100 N Phos CZ -111 1-20 500-550 P/E PRIME 100 N Phos FZ -111 2000-4000 500-550 P/P PRIME 100 N Phos CZ -111 1-20 4800-5200 P/E PRIME 100 N Phos CZ -111 1-3 11300-11500 P/E PRIME 100 N Phos CZ -110 450-500 P/P PRIME 100 N Phos CZ -110 1-20 500-550 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 175-225 P/P PRIME 100 P Boron CZ (100)-4 0.01-0.02 200-250 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 325-375 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM-XIAMEN Offers AlGaN–GaN HEMTs Grown on Sapphire Substrates
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production [...]
2014-08-15meta-author
GaN HEMT on sapphire, GaN HEMT on si, GaN HEMT on SiC
Porous Silicon Wafer
Porous Silicon Wafer PAM XIAMEN offers Porous Silicon Wafer. The novel uses of porous silicon include powering sattelites and perhaps even space ships! In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]
2019-02-15meta-author
How to Determine the SiC Polar?
The commonly used 4H-SiC and 6H-SiC space groups are both P63mc, and the point group is 6mm. 6mm belongs to one of 10 polar point groups (1, 2, 3, 4, 6; m, 3m; mm2, 4mm, 6mm), so 4H-SiC and 6H-SiC are polar crystals. The [...]
2021-04-09meta-author