Tag - algainp led structure

AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification                                                              · Orange LED Wafer Substrate:                    P+GaAsp-GaPp-AlGaInPMQWn-AlGaInPDBR n-ALGaAs/AlAsBufferGaAs substrate·Chip Sepcification (Base on 7mil*7mil chips)        ParameterChip Size 7mil(±1mil)*7mil(±1mil)Thickness 7mil(±1mil)P Electrode U/LN Electrode AUStructure Such as right-shown·Optical-elctric characters            Parameter Condition Min. Typ Max. UnitForward voltage If=10μA 1.35 ┄ ┄ VReverse voltage If=20mA ┄ ┄ 2.2 VReverse current V=10V ┄ ┄ 2 μmWavelength If=20mA 565 ┄ 575 nmHalf wave width If=20mA ┄ 10 ┄ nm·Light intensity characters            Brightness code LA LB LC LD LE LF LG LHIV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60  Source:PAM-XIAMEN   If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at [email protected] [email protected]