AlGaInP LED Chip Sepcification
AlGaInP LED Chip Sepcification · Orange LED Wafer Substrate: P+GaAs p-GaP p-AlGaInP MQW n-AlGaInP DBR n-ALGaAs/AlAs Buffer GaAs substrate ·Chip Sepcification (Base on 7mil*7mil chips) Parameter Chip Size 7mil(±1mil)*7mil(±1mil) Thickness 7mil(±1mil) P Electrode U/L N Electrode AU Structure Such as right-shown ·Optical-elctric characters Parameter Condition Min. Typ Max. Unit Forward voltage If=10μA 1.35 ┄ ┄ V Reverse voltage If=20mA ┄ ┄ 2.2 V Reverse current V=10V ┄ ┄ 2 μm Wavelength If=20mA 565 ┄ 575 nm Half wave width If=20mA ┄ 10 ┄ nm ·Light intensity characters Brightness code LA LB LC LD LE LF LG LH IV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60 Source:PAM-XIAMEN If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com orpowerwaymaterial@gmail.com.