Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices
We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident X-rays....