GaN based LED Epitaxial Wafer

GaN based LED Epitaxial Wafer

PAM-XIAMEN’s GaN(gallium nitride)-based LED epitaxial wafer is for ultra high brightness blue and green light emitting diodes (LED) and laser diodes (LD) application.

  • Description

Product Description

Wafer List

LED Wafer
ItemSizeOrientationEmissionWavelengthThickness  SubstrateSurfaceUsable area
 PAM-50-LED-BLUE-F50mm0°±0.5°blue light445-475nm425um+/-25umSapphireP/L>90%
 PAM-50-LED-BLUE-PSS50mm0°±0.5°blue light445-475nm425um+/-25umSapphireP/L>90%
 PAM-100-LED-BLUE-F100mm0°±0.5°blue light445-475nm/SapphireP/L>90%
 PAM-100-LED-BLUE-PSS100mm0°±0.5°blue light445-475nm/SapphireP/L>90%
 PAM-150-LED-BLUE150mm0°±0.5°blue light445-475nm/SapphireP/L>90%
 PAM-100-LED-BLUE-SIL100mm0°±0.5°blue light445-475nm/SiliconP/L>90%
 PAM-150-LED-BLUE-SIL150mm0°±0.5°blue light445-475nm/SiliconP/L>90%
 PAM-200-LED-BLUE-SIL200mm0°±0.5°blue light445-475nm/SiliconP/L>90%
 PAM-50-LED-GREEN-F50mm0°±0.5°green light510-530nm425um+/-25umSapphireP/L>90%
 PAM-50-LED-GREEN-PSS50mm0°±0.5°green light510-530nm425um+/-25umSapphireP/L>90%
 PAM-100-LED-GREEN-F100mm0°±0.5°green light510-530nm/SapphireP/L>90%
 PAM-100-LED-GREEN-PSS100mm0°±0.5°green light510-530nm/SapphireP/L>90%
 PAM-150-LED-GREEN150mm0°±0.5°green light510-530nm/SapphireP/L>90%
 PAM-100-LED-RED-PSS100mm15°±0.5°red light610-630nm/GaAsP/L>90%
 PAM-100-LED-RED-PSS100mm15°±0.5°red light850nm/GaAsP/L>90%


InGaN/GaN(gallium nitride) based LED Epitaxial Wafer

As LED wafer manufacturer,we offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED is by MOCVD with PSS or flat sapphire for LCD back light, mobile,electronic or UV(ultraviolet), with blue or green or red emission,including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

GaN on Al2O3-2” epi wafer Specification(LED Epitaxial wafer)

White: 445~460 nm
Blue:  465~475 nm
Green: 510~530 nm


1. Growth Technique – MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer pattern size: 3X2X1.5μm

5.Wafer structure:

Structure layersThickness(μm)
InGaN/GaN(active area)0.2
u- GaN3.5
Al2O3 (Substrate)430


6.Wafer parameters to make chips:

emColorChip SizeCharacteristicsAppearance 
PAM1023A01Blue10mil x 23mil Lighting
Vf = 2.8~3.4VLCD backlight
Po = 18~25mWMobile appliances
Wd  = 450~460nmConsumer electronic
PAM454501Blue45mil x 45milVf = 2.8~3.4VGeneral lighting
Po = 250~300mWLCD backlight
Wd = 450~460nmOutdoor display


7.Application of LED epitaixal wafer:*If you need to know more detail information of Blue LED Chip, please contact with our sales departments

LCD back light
Mobile appliances
Consumer electronic

8.Specification of LED Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

9.GaAs(Gallium arsenide)based LED Wafer:

Regarding GaAs LED wafer, they are grown by MOCVD,see below wavelength of GaAs LED wafer:
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

10. Definition of LED wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.


For these detail GaAs LED wafer specs,please visit:GaAs Epi Wafer for LED

For UV LED wafer specs,please visit:UV LED Epi Wafer  

For LED wafer on silicon specs,please visit:LED Wafer on Silicon 

For Blue GaN LD Wafer specs,please visit: Blue GaN LD Wafer

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

Red Infrared AlGaAs /GaAs LED Epi-Wafer

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