Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Distribution of defects and impurities in gallium arsenide wafers after surface gettering Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained with...