Tag - GaAs/AlGaAs/GaAs epi wafer

GaAs/AlGaAs/GaAs epi wafer

GaAs/AlGaAs/GaAs epi wafer We can offer 2″ or 4” GaAs/AlGaAs/GaAs epi wafer, please see below typical structure: Structure 1: 2”GaAs/AlGaAs/GaAs epi wafer S.No Parameters Specifications 1 GaAs substrate layer thickness 500μm 2 layer thickness 2μm 3 GaAs top layer thickness 220 nm 4 Mole fraction of Al (x) 0.7 5 Doping level Intrinsic   Structure 2: 2DEG GaAs/AlGaAs epi wafer PAM-190224-GAAS-EPI Structure Composition Thickness(nm) Cap GaAs 10 Doping carrier Al0.28GaAs1-0.28:Si 1.4×1018cm-3 – spacer Alo.28GaAs1-0.28 – channel GaAs – SL GaAs/Al0.28GaAs1-0.28 24A×24A – buffer GaAs 90 Sub SI GaAs(100) –   Structure 3: 4″diameter AlGaAs/GaAs Wafer. The structure (top to bottom) PAM-190605-ALGAAS: [...]