Tag - GaAs HEMT epi wafer

GaAs HEMT epi wafer

GaAs HEMT epi wafer We can offer 4″GaAs HEMT epi wafer with 2D electron gas (2DEG) with very high electron mobility of 5-7E5 cm2/V.s, please see below typical structure: Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT):HEMT structure ThicknessGaAs cap layer 100AAlGaAs, x=0.28,barrier layer, Si doped 7E17 500AAlGaAs, x=0.28,spacer layer 150AGaAs 0.5umAlxGaAs/GaAs, x=0.28, SL 30A/30A, 10 periodGaAs buffer 2000AGaAs substrate — Remark: 300K,Mobility [...]