Tag - GaAs HEMT epi wafer

GaAs HEMT epi wafer

GaAs HEMT epi wafer We can offer 4″GaAs HEMT epi wafer, please see below typical structure: Structure1: 4″AlGaAs/GaAs HEMT epi wafer( PAM200416-HEMT): HEMT structure Thickness GaAs cap layer 100A AlGaAs, x=0.28,barrier layer, Si doped 7E17 500A AlGaAs, x=0.28,spacer layer 150A GaAs 0.5um AlxGaAs/GaAs, x=0.28, SL 30A/30A, 10 period GaAs buffer 2000A GaAs substrate —   Remark: 300K,Mobility :> 5000cm2/V.s, Ns>4.0E11  77K, Mobility: > 150,000-190,000 cm2/V.s,Ns>4.0E11 Structure 2: GaAs MBE epiwafers 1) 4″ [...]