Tag - GaAs Schottky Diode Epitaxial Wafers

GaAs Schottky Diode Epitaxial Wafers

We offer GaAs Epitaxial Wafers for Schottky Diode as follows: 1. GaAs Schottky Diode Epi Structures No.1 GaAs Schottky Diode Epiwafer Epitaxial Structure PAM210319 No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C     Tol. Dopant Carrrier Type 4 GaAs   1.00 ±10% >5.0E18 N/A Si N++ 3 GaAs   0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs   0.05 ±10% — N/A — — Substrate: 2”,3”,4″   No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode PAM210326 -SDE No. Material Thickness Doping Doping Concentration 3 GaAs schottky contact layer – n – 2 GaAs ohmic contact layer – – 5×10^18 cm-3 1 Low temperature GaAs 2um – – 0 Semi-insulating GaAs (100) substrate –     2. About GaAs Schottky Diode [...]