Tag - GaAs Schottky Diode Epitaxial Wafers

GaAs Schottky Diode Epitaxial Wafers

GaAs Schottky Diode Epitaxial Wafers We offer GaAs Epitaxial Wafers for Schottky Diode as follows:Epitaxial Structure PAM210319No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C     Tol. Dopant Carrrier Type4 GaAs   1.00 ±10% >5.0E18 N/A Si N++3 GaAs   0.28 ±10% 2.0E17 ±10% Si N2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — —1 GaAs   0.05 ±10% — N/A — —Substrate: 2”,3”,4″  Millimeter and submillimeter heterodyne observations will improve our understanding of the universe, the solar system and the Earth atmosphere. Schottky diodes are strategical components that can be used to [...]