Tag - gaas wafer size

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range

High-power broad-area InGaNAs/GaAs quantum-well (QW) edge-emitting lasers on GaAs substrates in the 1200 nm range are reported. The epitaxial layers of the InGaNAs/GaAs QW laser wafers were grown on n+-GaAs substrates by using metal-organic chemical vapor deposition (MOCVD). The thickness of the InGaNAs/GaAs QW layers is 70 Å/1200 Å. The indium content [...]