Tag - gallium nitride international rectifier

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching Highlights •Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. •InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. •Overgrown GaN films and LEDs showed [...]