Gallium Semiconductor Wafer
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP GaSb Wafer Substrate – Gallium Antimonide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 GaSb (100)±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)A±0.5 50.8 500±25 SSP N/A Te 1E17 – 5E18 N/A < 1000 1-100 GaSb (111)B 50.8 N/A N/A N/A Te (5-8)E17 N/A N/A 1-100 GaSb (111)B 50.8 N/A N/A N/A Undoped none N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A P/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/ (1-5)E17cm-3 N/A N/A 1-100 GaSb (100)±0.5 50.8 500 SSP N/A N/Te (1-8)E17/(2-7)E16 N/A < 1000 1-100 GaSb (100) 50.8 450±25 SSP N/A N/A (1-1.2)E17 N/A N/A 1-100 GaSb (100) 50.8 350±25 SSP N/A N/A N/A N/A N/A 1-100 GaSb (100) 76.8 500-600 N/A N/A Undoped none N/A N/A 1-100 GaSb (100) 100 800±25 DSP N/A P/Zn N/A N/A N/A 1-100 GaSb (100) 100 250±25 N/A N/A P/ZnO N/A N/A N/A As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team 1)2″,3″GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:P/undoped;P/Si;P/Zn Nc(cm-3):(1~2)E17 Mobility（cm2/V ·s):600~700 Growth Method:CZ Polish:SSP 2)2″GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:N/undoped;P/Te Nc(cm-3):(1~5)E17 Mobility（cm2/V ·s):2500~3500 Growth Method:LEC Polish:SSP Note: *** As [...]