Tag - Hydride vapor-phase epitaxy

Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate A freestanding m-plane GaN wafer is fabricated by using the hydride vapor-phase epitaxy (HVPE) technique on an aluminum carbide buffer layer on an m-plane sapphire substrate. X-ray pole-figure measurements show [...]