Tag - III–V semiconductors

Monitoring defects in III–V materials: A nanoscale CAFM study

Highlights •Nanoscale defects in III–V materials, grown over Si were characterized with CAFM. •The defects exhibit higher conductivity. •The contact rectifying feature is hide by a larger current under the reverse bias. •Patterned samples fabricated using Aspect Ratio Trapping were also characterized.Abstract The implementation of high mobility devices requires growing III–V materials on silicon [...]