Indium Semiconductor Wafer
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb InAs wafer Substrate- Indium Arsenide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD PCS (mm) (μm) Ω·cm a/cm3 cm2/Vs /cm2 1-100 InAs (110) 40.0 500 SSP N/A P (1-9)E17 N/A N/A 1-100 InAs (100) 50.8 450 SSP N/A P 1E17/cc N/A < 20000 1-100 InAs (100) 50.8 400 SSP N/A N/S 5E18-2E19 >6,000 <1E4 1-100 InAs (100) 50.8 400 DSP N/A N/S 5E18-2E19 >6,000 <1E4 1-100 InAs (111)B 50.8 N/A SSP N/A N/S (1-3)E18 N/A N/A 1-100 InAs (100) 50.8 N/A SSP N/A N/Te 1E16/cc N/A N/A 1-100 InAs (100) 50.8 400 DSP N/A P (1-9)E18/cc N/A N/A 1-100 InAs (100) 3x3x5 N/A N/A N/A N/A 3E16/cc N/A N/A As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team 3)2”InAs Type/Dopant:N Un-doped Orientation : <111>A ±0.5° Thickness：500um±25um epi-ready Ra<=0.5nm Carrier Concentration(cm-3):1E16~3E16 Mobility(cm -2 ):>20000 EPD（cm -2 ）:<15000 SSP 5)2”InAs Type/Dopant:N/P Orientation ：(100), Carrier Concentration(cm-3)：(5-10)E17, Thickness：500 um SSP Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. InP Wafer Substrate- Indium Phosphide Quantity Material Orientation. Diameter Thickness Polish Resistivity Type [...]