Tag - ingaas detector

Structure for InGaAs photodetectors

Structure for InGaAs photodetectors We offer the wafer structure InGaAs photodetectors as follows: Material X Thickness (nm) Dopant Doping concentration InP   1000 N (Sulfur) 3e16 In(x)GaAs 0.53 3000 U/D 5e14 InP   500 N (Sulfur) 3e16 Substrate     SI (Fe)   Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com.