Tag - InGaAs/InP epi wafer for PIN

InGaAs/InP epi wafer for PIN

InGaAs/InP epi wafer for PIN   We can offer 2″ InGaAs/InP epi wafer for PIN as follows:   InP Substrate: InP Orientation: (100) Doped with Fe, Semi-Insulating wafer Size: 2″ diameter Resistivity:>1×10^7)ohm.cm EPD:<1×10^4 /cm^2 Single side polished.   EPI layer : InxGa1-xAs Nc>2×10^18 /cc (using Si as dopant), Thickness :0.5 um (+/- 20%) Roughness of epi-layer, Ra<0.5nm   Source: PAM-XIAMEN   If you need more information about InGaAs/InP epi [...]