Tag - ingaas photodiode

Structure for InGaAs photodetectors

Structure for InGaAs photodetectorsWe offer the wafer structure InGaAs photodetectors as follows:Material X Thickness (nm) Dopant Doping concentrationInP   1000 N (Sulfur) 3e16In(x)GaAs 0.53 3000 U/D 5e14InP   500 N (Sulfur) 3e16Substrate     SI (Fe)  Source:PAM-XIAMENFor more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected]  or [email protected]