InGaAsP/InGaAs on InP substrates
InGaAsP/InGaAs on InP substrates We provide InGaAsP/InGaAs epi on InP substrates as follows: Structure1: 1.55um InGaAsP QW laser No. Layer Doping 0 InP Substrate S-doped, 2E18/cm-3 1 n-InP buffer 1.0um, 2E18/cm-3 2 1.15Q-InGaAsP waveguide 80nm,undoped 3 1.24Q-InGaAsP waveguide 70nm,undoped 4 4×InGaAsP QW（+1%） 5×InGaAsP Barrier 5nm 10nm PL:1550nm 5 1.24Q-InGaAsP waveguide 70nm,undoped 6 1.15Q-InGaAsP waveguide 80nm,undoped 7 InP space layer 20nm,undoped 8 InP 100nm,5E17 9 InP 1200 nm, 1.5E18 10 InGaAs 100 nm, 2E19 Specification of Structure1: 1) Method: MOCVD 2) Size of wafer: 2” 3) InGaAsP/InGaAs growth on InP substrates 4) 3-5 types of [...]