InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates We provide InGaAsP/InGaAs epi on InP substrates as follows: Structure1: 1.55um InGaAsP QW laser No. Layer Doping 0 InP Substrate S-doped, 2E18/cm-3 1 n-InP buffer 1.0um, 2E18/cm-3 2 1.15Q-InGaAsP waveguide 80nm,undoped 3 1.24Q-InGaAsP waveguide 70nm,undoped 4 4×InGaAsP QW（+1%） 5×InGaAsP Barrier 5nm 10nm PL:1550nm 5 1.24Q-InGaAsP waveguide 70nm,undoped 6 1.15Q-InGaAsP waveguide 80nm,undoped 7 InP space layer 20nm,undoped 8 InP 100nm,5E17 9 InP 1200 nm, 1.5E18 10 InGaAs 100 nm, 2E19 Specification of Structure1: 1) Method: MOCVD 2) Size of wafer: 2” 3) InGaAsP/InGaAs growth on InP substrates 4) 3-5 types of [...]

2014-11-21 InGaAsP/InGaAs on InP substrates Read more...

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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PAM-XIAMEN Offers Photomasks

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Tag - InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers