Tag - InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates     We provide InGaAsP/InGaAs epi on InP substrates as follows:   1.Structure: 1.55um InGaAsP QW laser   No. Layer Doping 0 InP Substrate S-doped, 2E18/cm-3 1 n-InP buffer 1.0um, 2E18/cm-3 2 1.15Q-InGaAsP waveguide 80nm,undoped 3 1.24Q-InGaAsP waveguide 70nm,undoped 4 4×InGaAsP QW(+1%) 5×InGaAsP Barrier 5nm     10nm   PL:1550nm 5 1.24Q-InGaAsP waveguide 70nm,undoped 6 1.15Q-InGaAsP waveguide 80nm,undoped 7 InP space layer 20nm,undoped 8 InP 100nm,5E17 9 InP 1200 nm, 1.5E18 10 InGaAs 100 nm, 2E19   2.Specification: 1)   Method: MOCVD 2)   Size of wafer: 2” 3)   InGaAsP/InGaAs  growth on InP substrates 4)   3-5 types of InGaAsP composition 5)   PL [...]