Tag - InGaN/GaN LEDs

Inserting a low temperature n GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDsWe have investigated the effects of nonradiative recombination centers (NRCs) on the device performance of InGaN/GaN multi-quantum-well (MQW) light-emitting diodes (LEDs) inserting low-temperature n-GaN (LT-GaN) underlying layers. Inserting an LT-GaN underlying [...]