Tag - InP/InGaAs/InP epi wafer

InP/InGaAs/InP epi wafer

We can offer 2″ InP/InGaAs/InP epi wafer as follows: InP Substrate: Indium Phosphide wafers, P/E 2″dia×350+/-25um, n-type InP:S (100)+/-0.5°, EDP<1E4/cm2. One-side-polished, back-side matte etched, SEMI Flats. EPI layer : Epi 1: InGaAs:(100)        Thickness:100nm,        etching stop layer Epi 2: InP:(100)        Thickness:50nm,         bonding layer Source: PAM-XIAMEN If you need more information about InP/InGaAs/InP epi wafer , please visit our website:https://www.powerwaywafer.com/, send us email [...]