Tag - Low-temperature GaAs grown

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction studyReflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The [...]