Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less than 1 nm rms roughness [...]