Tag - LT-GaAs

enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had a 1-mm-thick LT GaAs layer [...]

A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers

A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser The Ti oxide is used as insulator between the electrodes to substitute the air gap of photoconductive semiconductive switch (PCSS). The width of the oxide is smaller than 100nm, the electrodes and substrate’s materials are Ti and LT-GaAs respectively. The simulation [...]

Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique

Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of the LT GaAs growth temperature are presented for [...]

Photoemission study of LT-GaAs

Photoemission study of LT-GaAs The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d core level spectra does not [...]

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures or too high As pressures, [...]

LT-GaAs

LT-GaAs   We offer LT-GaAs for THz or detector and other application.   2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier <0.5ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Other conditions:   1)    GaAs substrate should be undoped/semi-insulating with (100)orientation. 2)    Growth temperature: ~ 200-250 C Annealed for ~ 10 minutes at 600 C after growth   LT-GaAs Introduction:   Low-temperature [...]

THz Generation Process in LT-GaAs

THz Generation Process in LT-GaAs   Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a femtosecond laser pulse illuminates a [...]