Tag - MOCVD GaN

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level [...]