Tag - Molecular beam epitaxy

Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE

Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBEWe have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the conductive layer width, as determined [...]