Properties of C-doped LT-GaAs grown by MBE using CBr4
Properties of C-doped LT-GaAs grown by MBE using CBr4 MBE grown LT-GaAs contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. Thermal annealing can result in a dramatic decrease in AsGaconcentration, accompanied by out-diffusion of excess As into adjacent layers. Doping [...]