Tag - semi-insulating GaAs wafer

Optimisation of the epi-ready semi-insulating GaAs wafer preparation procedure

The surface quality is crucial for growth of epitaxial layers on III–V semiconductor substrates. In this work the procedures of epi-ready semi-insulating (SI) GaAs wafer preparation were developed. The atomic force microscopy (AFM), triple crystal X-ray diffraction (TCD) and X-ray photoelectron spectroscopy (XPS) were used to monitor morphology and composition [...]