There are three grade diamond wafer, Microelectronics Grade Diamond Wafer for wafer fabrication, Thermal Grade Diamand Wafers and Slices and Optical grade diamond wafers:
1.Microelectronics Grade Diamond Wafer for wafer fabrication
1.1 specification of Microelectronics Grade Diamond Wafer
Diamond Wafer
Polycrystalline Diamond
Growth Method
MPCVD
Wafer Thickness
0~500um+/-25um
Wafer Size
1cm*1cm;2inch; custom
Surface Roughness
Ra< 1 nm
FWHM （D111）
0.354
Coefficient [...]
2018-07-10meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches
Published by:
K. Haehre ; M. Meisser ; F. Denk ; [...]
2019-12-09meta-author
PAM XIAMEN offers YBCO Epi Film on SrTiO3 , LaAlO3 or Al2O3,LSAT.
One Side 100nm YBCO Film on both side polished SrTiO3(100) 10x10x0.5 mm substrate
One Side 100nm YBCO Film on SrTiO3(100) 10x10x0.5 mm substrate
One Side 400nm YBCO Film on SrTiO3(100) 10x10x0.5 mm [...]
2019-04-29meta-author
PAM XIAMEN offers 4″ Silicon Oxide Wafer
4″ Silicon Oxide Wafer
Diameter (mm): 100mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any [...]
2020-04-26meta-author
Silicon Carbide Circuits on the Way
Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
Highlights
•We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.
•We examine impact of temperature on the electrical parameters of fabricated devices.
•The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V.
•The SD-HEMTs are characterized by lower increase of Ron [...]
