Test grade silicon wafers-10

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 5 Ohmcm 200 ± 0.5 mm 650 ± 5 µm 20 3 35
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.7 – 5.0 Ohmcm 200 ± 0.2 mm 500 ± 10 µm 3,5 50
8 DSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.20° 1 – 50 Ohmcm 200 ± 0.2 mm 725 ± 20 30 0,9 30
8 DSP Red Phos. N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 0.001 – 0.002 Ohmcm 200 ± 0.2 mm 725 ± 25 µm 50 1 50
8 DSP Red Phos. N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 0.010 – 0.020 Ohmcm 200 ± 0.2mm 500 ± 10 µm 20 2 30
8 DSP Red Phos. N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 0.001 – 0.002 Ohmcm 200 ± 0.2 mm 725 ± 25 µm
8 DSP Red Phos. N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° < 0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 60 3 60
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 1 – 50 Ohmcm 200 ± 0.2 mm 725 ± 25 µm 35 6 35
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 -1.0-1.0° 0.007-0.02 Ohmcm 199.8-200.2mm 710-740 µm 40 5 60
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 -1.0-1.0° 0.007-0.02 Ohmcm 199.8-200.2mm 710-740 µm 40 5 60
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 -1.0-1.0° 0.007-0.02 Ohmcm 199.8-200.2mm 710-740 µm 40 5 60
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5 ° 0.008 – 0.020 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 8 32
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 200 ± 0.2 mm 725 ± 10 µm 60 10 60
8 SSP Antimony N+ 100 0,0 ± 0,0 011 ± 1 0.0 ± 0.6° 0.005 – 0.020 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 25 4 30
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 -1.0-1.0° 0.007-0.02 Ohmcm 199.8-200.2mm 710-740 µm 40 5 60
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5 ° 0.008 – 0.020 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 8 32
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 200 ± 0.2 mm 500  ± 5 µm 4 50
8 SSP Antimony N+ 100 0,0 ± 0,0 110 ± 1 -1.0-1.0° 0.007-0.02 Ohmcm 199.8-200.2 mm 710-740 µm 40 5 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 0.003-0.006 Ohmcm 200 ± 0.2 mm 675 ± 15 µm 50 4 50
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 80 4 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.001 – 0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 80 4 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° < 3 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 6 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° < 3 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 6 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 1 – 4 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 111 0,0 ± 0,0 110 ± 1 3 ± 0.5 ° 1 – 4 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1° 0.0022-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 25 3 45
8 SSP Arsenic N+ 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0° 2.0 ± 1.0 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 65 8 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 1 – 4 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 111 0,0 ± 0,0 110 ± 1 3 ± 0.5 ° 1 – 4 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5 ° 0.005 – 0.007 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 4 40
8 SSP Arsenic N+ 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0° 2.0 ± 1.0 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 65 8 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 -1.0 – 1.0° 0.0015-0.003 Ohmcm 200.0±0.5 mm 710-740 µm 60 6 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5 ° 0.005 – 0.007 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 4 40
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1° 0.0015-0.003 Ohmcm 200.0±0.5 mm 725 ± 15 40 6 40
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 1 – 4 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 1 – 3.5 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 32 10 32
8 SSP Arsenic N+ 111 0,0 ± 0,0 110 ± 1 3 ± 0.5 ° 1 – 4 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 111 0,0 ± 0,0 110 ± 1 3 ± 0.5° 1 – 3 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 80 10 80
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 80 4 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 2.0- 3.0 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 6 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0° 2.0 ± 1.0 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 65 8 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1° 0.0022-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 25 3 45
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.33° 0.001 – 0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0° 0.0015-0.003 Ohmcm 200.0±0.5 mm 725 ± 15 µm 60 6 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.001-0.003 Ohmcm 200.0 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 4 50
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 4 50
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 4 50
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 1.0° < 0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 4 60
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 4 50
8 SSP Arsenic N+ 100 0,0 ± 0,0 011 ± 1 0.0 ± 1.0° 2.0 ± 1.0 mOhmcm 200 ± 0.2 mm 725 ± 15 µm 65 8 100
8 SSP Arsenic N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2 ° 0.001 – 0.005 Ohmcm 200 ± 0.2 mm 712.5 ± 12.5 µm 60 8 75
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.1 ± 0.4° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 4 50
8 SSP Arsenic N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5° 0.002-0.003 Ohmcm 200 ± 0.2 mm 725 ± 15 µm
8 SSP Arsenic N+ 100 0,0 ± 0,0 0TT ± 1 0.0 ± 1.0° <= 0.0035 Ohmcm 200 ± 0.2 mm 685 ± 5 µm 30 3 30

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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