Test grade silicon wafers-2

Test grade silicon wafers-2

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
4 DSP Boron P 100 32,5 ± 2,5 110 ± 1 0.0 ± 1.0° 1 – 100 Ohmcm 100 ± 0.3 mm 302 ± 4 µm 35 4 35
4 DSP Boron P 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 3 – 7 Ohmcm 100 ± 0.5 mm 385 ± 5 µm 40 3 40
4 DSP Boron P+ 100 32,5 ± 2,5 110 ± 0,50   90 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.010 – 0.025 Ohmcm 100 ± 0.2 mm 500 ± 25 µm 30 10 30
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.5 – 1.0 Ohmcm 100 ± 0.5 mm 385 ± 5 µm 3
4 DSP Phosphorus N 111 32,5 ± 2,5 110 ± 0,20   45 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 1 – 20 Ohmcm 100.0 ± 0.5 mm 300 ± 3 µm 3
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 2 – 4 Ohmcm 100 ± 0.5 mm 260 ± 2 µm 1 25
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 2 – 4 Ohmcm 100 ± 0.5 mm 300 ± 2 µm 1 25
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 1 – 20 Ohmcm 100.0 ± 0.5 mm 350 ± 15 µm
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 3 – 5 Ohmcm 100.0 ± 0.5 mm 525 ± 5 µm 3
4 DSP Phosphorus N 111 32,5 ± 2,5 110 ± 0,50    45 ±   5.0 °,   18.00 ±  2.00 mm 0.0 ± 0.1° 3 – 8 Ohmcm 100 ± 0.5 mm 450 ± 10 µm
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 2 – 4 Ohmcm 100 ± 0.5 mm 220 ± 2 µm 1 25
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1 0.0 ± 0.5° 1 – 3 Ohmcm 100 ± 0.5 mm 368 ± 10 µm 2 30
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,20  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.20 – 0.25 Ohmcm 100 ± 0.2mm 380 ± 5 µm 1
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 2 – 6 Ohmcm 100.0 ± 0.5 mm 381 ± 6 µm 1
4 DSP Phosphorus N 111 32,5 ± 2,5 110 ± 0,50   45 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0° 1 – 20 Ohmcm 100.0 ± 0.5 mm 350 ± 3 µm 3
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0° 10 – 20 Ohmcm 100.0 ± 0.5 mm 300 ± 10 µm
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 1.4 – 6.0 Ohmcm 100 ± 0.5 mm 445 ± 5 µm 33 2
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 5 – 8 Ohmcm 100.0 ± 0.5 mm 300 ± 5 µm 3
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1 0.0 ± 0.5° 1 – 3 Ohmcm 100 ± 0.5 mm 368 ± 10 µm 1 30
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.05 – 0.5 Ohmcm 100 ± 0.5 mm 525 ± 25 µm 1 20
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 3 – 5 Ohmcm 100.0 ± 0.5 mm 300 ± 5 µm 40 2 40
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° 2 – 4 Ohmcm 100 ± 0.5 mm 400 ± 2 µm 1 25
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 10 – 20 Ohmcm 100.0 ± 0.5 mm 300 ± 10 µm 2
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 3 – 5 Ohmcm 100 ± 0.5 mm 200 ± 4 µm 2
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 1 – 20 Ohmcm 100.0 ± 0.5 mm 500 ± 15 µm
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,25 0.0 ± 0.25 ° 1 – 10 ohmcm 100 ± 0.5 mm 300 ± 5 µm 3
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,20  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 1 – 100 Ohmcm 100 ± 0.5 mm 360 ± 10 µm
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 1 – 10 Ohmcm 100.0 ± 0.5 mm 380 ± 5 µm
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50   180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 1 – 10 Ohmcm 100 ± 0.2 mm 350 ± 5 µm 2
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1 0.0 ± 1.0° 1 – 3 Ohmcm 100 ± 0.5 mm 280 ± 5 µm 1 30
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.05 – 0.5 Ohmcm 100 ± 0.5 mm 525 ± 25 µm 1 20
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,30 0.0 ± 0.2° 2 – 10 Ohmcm 100 ± 0.2 mm 380 ± 5 µm 25 3 30
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5 ° 0.04 – 20 Ohmcm 100.0 ± 0.2 mm 400 ± 10 µm 40 2,5 50
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,30  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.2 ° 2 – 10 Ohmcm 100 ± 0.2 mm 300 ± 5 µm 25 3 25
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 3 – 5 Ohmcm 100.0 ± 0.5 mm 525 ± 5 µm 2
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.5 – 1.0 Ohmcm 100 ± 0.5 mm 485 ± 5 µm 40 3 40
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 0,50  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 0.5° 0.5 – 1.0 Ohmcm 100 ± 0.5 mm 385 ± 5 µm 40 3 40
4 DSP Phosphorus N 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 10 – 20 Ohmcm 100.0 ± 0.5 mm 300 ± 10 µm 40 2 40
4 DSP Red Phos. N+ 100 32,5 ± 2,5 110 ± 0,20 0.0 ± 0.2° < 0.0015 Ohmcm 100 ± 0.25 mm 250 ± 5 µm 40 1 40
4 DSP Red Phos. N+ 100 32,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° < 0.0015 Ohmcm 100 ± 0.25 mm 380 ± 5 µm
4 SSP Arsenic N+ 111 32,5 ± 2,5 110 ± 1 3.0 ± 0.5 ° < 0.005 Ohmcm 100 ± 0.3 mm 381 ± 15 µm 25 10 30
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,30 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 20 3 35
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0° 0.005-0.02 Ohmcm 150 ± 0.2 mm 215-235 µm
6 DSP Antimony N+ 100 57,5 ± 2,5 011 ± 0,30 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 20 3 35
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,10 0.0 ± 0.2° < 0.020 Ohmcm 150 ± 0.2 mm 400 ± 10 µm 2
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.2° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 400 ± 15 µm 60 4 60
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.5 mm 425 ± 5 µm 40 2 40
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,30 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 20 3 35
6 DSP Antimony N+ 100 57,5 ± 2,5 011 ± 0,30 0.0 ± 0.5° 0.005 – 0.020 Ohmcm 150.0 ± 0.2 mm 380 ± 5 µm 20 3 35
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 0.010-0.020 Ohmcm 150.0±0.2 mm 375-385 µm
6 DSP Antimony N+ 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 0.01 – 0.02 Ohmcm 150 ± 0.2 mm 325 ± 5 µm 40 0,6 40

 

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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2019-02-25

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